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Epitaxial growth of γ-Al2
AlC(0001) by reactive high-power impulse magnetron sputtering
28. M. Beckers, C. Höglund, C. Baehtz, R. M. S. Martins, P. O. Å Persson, L. Hultman, and W. Möller, J. Appl. Phys. 106, 064915 (2009).
29. P. Eklund, M. Bugnet, V. Mauchamp, S. Dubois, C. Tromas, J. Jensen, L. Piraux, L. Gence, M. Jaouen, and T. Cabioc'h, Phys. Rev. B 84, 075424 (2011).
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Al 2O3 was deposited by reactive high-power impulse magnetron sputtering at 600 °C onto pre-deposited Ti2AlC(0001) thin films on α-Al2O3(0001) substrates. The Al 2O3 was deposited to a thickness of 65 nm and formed an adherent layer of epitaxial γ-Al2O3(111) as shown by transmission electron microscopy. The demonstration of epitaxial growth of γ-Al2O3 on Ti2AlC(0001) open prospects for growth of crystalline alumina as protective coatings on Ti2AlC and related nanolaminated materials. The crystallographic orientation relationships are γ-Al2O3(111)//Ti2AlC(0001) (out-of-plane) and (in-plane) as determined by electron diffraction. Annealing in vacuum at 900 °C resulted in partial decomposition of the Ti2AlC by depletion of Al and diffusion into and through the γ-Al2O3 layer.
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