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/content/aip/journal/adva/4/10/10.1063/1.4897379
2014-10-03
2016-12-07

Abstract

Scanning moiré fringe (SMF) imaging by high-angle annular dark field scanning transmission electron microscopy was used to measure the strain field in the channel of a transistor with a CoSi source and drain. Nanometer-scale SMFs were formed with a scanning grating size of at integer multiples of the Si crystal lattice spacing (, n = 2, 3, 4, 5). The moiré fringe formula was modified to establish a method for quantifying strain measurement. We showed that strain fields in a transistor measured by SMF images were reproducible with an accuracy of 0.02%.

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