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/content/aip/journal/adva/4/10/10.1063/1.4898150
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/content/aip/journal/adva/4/10/10.1063/1.4898150
2014-10-10
2016-12-05

Abstract

Using a ferroelectric PbZrTiO gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope). The drain conductance (g) shows only 16% enhancement with large V (∼−1.5V) indicates internal voltage amplification with ferroelectric negative capacitance effect beneficial to small lateral drain-source bias voltages (−0.1 V). The concept of coupling the ferroelectric polarization is proposed. The power consumption is also discussed in low-power applications of steep subthreshold slope devices.

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