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/content/aip/journal/adva/4/10/10.1063/1.4899188
2014-10-20
2016-12-05

Abstract

We report a unipolar, nonvolatile resistive switching in polycrystalline YMnO thin films grown by pulsed laser deposition and sandwiched between Au top and Ti/Pt bottom electrodes. The ratio of the resistance in the OFF and ON state is larger than 103. The observed phenomena can be attributed to the formation and rupture of conductive filaments within the multiferroic YMnO film. The generation of conductive paths under applied electric field is discussed in terms of the presence of grain boundaries and charged domain walls inherently formed in hexagonal YMnO. Our findings suggest that engineering of the ferroelectric domains might be a promising route for designing and fabrication of novel resistive switching devices.

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