Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
1.K. Normura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature 432, 488 (2004).
2.K. Normura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Science 23, 1269 (2003).
3.D.-H. Lee, Y.-J. Chang, G. S. Herman, and C.-H. Chang, Adv. Mater. 19, 843 (2007).
4.H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, and D. A. Keszler, Appl. Phys. Lett. 86, 013503 (2005).
5.M.-G. Kim, M. G. Kanatzidis, A. Facchetti, and T. Marks, Nature Mater. 10, 382 (2011).
6.Y.-L. Wang, F. Ren, W. Lim, D. P. Norton, S. J. Pearton, I. I. Kravchenko, and J. M. Zavada, Appl. Phys. Lett. 90, 232103 (2007).
7.W. B. Jackson, R. L. Hoffman, and G. S. Herman, Appl. Phys, Lett. 87, 193503 (2005).
8.A. Suresh, P. Wellenius, A. Dhawan, and J. Muth, Appl. Phys. Lett. 90, 123512 (2007).
9.D.-H. Cho, S. Yang, C. Byun, J. Shin, M. K. Ryu, S.-H. Ko Park, C.-S. Hwang, S. M. Chung, W.-S. Cheong, S. M. Yoon, and H.-Y. Chu, Appl. Phys. Lett. 93, 142111 (2008).
10.K.-H. Lee, J. S. Jung, K. S. Son, J. S. Park, T. S. Kim, R. Choi, J. K. Jeong, J.-Y. Kwon, B. Koo, and S. Lee, Appl. Phys. Lett. 95, 232106 (2009).
11.M. D. H. Chowdhury, P. Migliorato, and J. Jang, Appl. Phys. Lett. 97, 173506 (2010).
12.S.-Y. Lee, J.-Y. Kwon, and M.-K. Han, IEEE Trans. Electron Devices 60, 2574 (2013).
13.J. S. Park, W.-J. Maeng, H.-S. Kim, and J.-S. Park, Thin Solid Films 520, 1679 (2012).
14.P. Barquinha, A. Pimentel, A. Marques, L. Pereira, R. Martins, and E. Fortunato, J. Non-Cryst. Solids 352, 1756 (2006).
15.K. W. Lee, K. M. Kim, K. Y. Heo, S. K. Park, S. K. Lee, and H. J. Kim, Current Appl. Phys. 11, 280 (2011).
16.K. Takechi, M. Nakata, T. Eguchi, H. Yamaguchi, and S. Kaneko, J. Jpn. Appl. Phys. 48, 010203 (2009).
17.A. Rolland, J. Richard, J. P. Kleider, and D. Mencaraglia, J. Electrochem. Soc. 140, 3679 (1993).
18.S. Yang, D.-H. Cho, M. K. Ryu, S.-H. Ko Park, C.-S. Hwang, J. Jang, and J. K. Jeong, Appl. Phys. Lett. 96, 213511 (2010).
19.T.-C. Chen, T.-C. Chang, T.-Y. Hsieh, C.-T. Tsai, S.-C. Chen, C.-S. Lin, M.-C. Hung, C.-H. Tu, J.-J. Chang, and P.-L. Chen, Appl. Phys. Lett. 97, 192103 (2010).
20.T. Kamiya and H. Hosono, Int. J. Appl. Ceram. Technol. 2, 285 (2005).
21.E. Fortunato, P. Barquinha, and R. Martins, Adv. Mater. 24, 2945 (2012).
22.K.-S. Son, J. S. Park, T. S. Kim, H.-S. Kim, S.-J. Seo, S.-J. Kim, J. B. Seon, K. H. Ji, J. K. Jeong, M. K. Ryu, and S. Lee, Appl. Phys. Lett. 102, 122108 (2013).
23.S. Lee and A. Nathan, Appl. Phys. Lett. 101, 113502 (2012).
24.K. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yang, K. Kobayashi, M. Hirano, and H. Hosono, Appl. Phys. Lett. 92, 202117 (2008).
25.S. Lee, K. Ghaffarzadeh, A. Nathan, J. Robertson, S. Jeon, C. Kim, I.-H. Song, and U.-I. Chung, Appl. Phys. Lett. 98, 203508 (2011).
26.J.-M. Lee, I.-T. Cho, J.-H. Lee, and H.-I. Kwon, Appl. Phys. Lett. 93, 093504 (2008).
27.J. K. Jeong, H. W. Yang, J. H. Jeong, Y.-G. Mo, and H. D. Kim, Appl. Phys. Lett. 93, 123508 (2008).
28.D. Kang, H. Lim, C. Kim, I. Song, J. Park, and Y. Park, Appl. Phys. Lett. 90, 192101 (2007).
29.Y.-C. Chen, T.-C. Chang, H.-W. Li, S.-C. Chen, J. Lu, W.-F. Chung, Y.-H. Tai, and T.-Y. Tseng, Appl. Phys. Lett. 96, 262104 (2010).
30.J. Yao, N. Xu, S. Deng, J. Chen, J. She, H. D. Shieh, P.-T. Liu, and Y-P. Huang, IEEE Trans. Electron Devices 58, 1121 (2011).
31.K. H. Ji, J.-I. Kim, H. Y. Jung, S. Y. Park, R. Choi, U. K. Kim, C. S. Hwang, D. Lee, H. Hwang, and J. K. Jeong, Appl. Phys. Lett. 98, 103509 (2011).

Data & Media loading...


Article metrics loading...



We investigate the origin of visible-light-induced instability in amorphous metal-oxide based thin film transistors (oxide-TFTs) for transparent electronics by exploring the shift in threshold voltage (V). A large hysteresis window in amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs possessing large optical band-gap (≈3 eV) was observed in a visible-light illuminated condition whereas no hysteresis window was shown in a dark measuring condition. We also report the instability caused by photo irradiation and prolonged gate bias stress in oxide-TFTs. Larger V shift was observed after photo-induced stress combined with a negative gate bias than the sum of that after only illumination stress and only negative gate bias stress. Such results can be explained by trapped charges at the interface of semiconductor/dielectric and/or in the gate dielectric which play a role in a screen effect on the electric field applied by gate voltage, for which we propose that the localized-states-assisted transitions by visible-light absorption can be responsible.


Full text loading...


Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd