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/content/aip/journal/adva/4/11/10.1063/1.4902017
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/content/aip/journal/adva/4/11/10.1063/1.4902017
2014-11-13
2016-09-26

Abstract

This work presents a detailed study on the chemical composition and bond structures of CeO/LaO stacked gate dielectrics based on x-ray photoelectron spectroscopy (XPS) measurements at different depths. The chemical bonding structures in the interfacial layers were revealed by Gaussian decompositions of Ce 3d, La 3d, Si 2s, and O 1s photoemission spectra at different depths. We found that La atoms can diffuse into the CeO layer and a cerium-lanthanum complex oxide was formed in between the CeO and LaO films. Ce3+ and Ce4+ states always coexist in the as-deposited CeO film. Quantitative analyses were also conducted. The amount of CeO phase decreases by about 8% as approaching the CeO/LaO interface. In addition, as compared with the single layer LaO sample, the CeO/LaO stack exhibits a larger extent of silicon oxidation at the LaO/Si interface. For the CeO/LaO gate stack, the out-diffused lanthanum atoms can promote the reduction of CeO which produce more atomic oxygen. This result confirms the significant improvement of electrical properties of CeO/LaO gated devices as the excess oxygen would help to reduce the oxygen vacancies in the film and would suppress the formation of interfacial La-silicide also.

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