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Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer
1.P. Waltereit, W. Bronner, R. Quay, M. Dammann, R. Kiefer, S. Müller, M. Musser, J. Kühn, F. van Raay, M. Seelmann, M. Mikulla, O. Ambacher, F. van Rijs, T. Rödle, and K. Riepe, Phys. Status Solidi A 206, 1215 (2009).
3.R. Li, S. J. Cai, L. Wong, Y. Chen, K. L. Wang, R. P. Smith, S. C. Martin, K. S. Boutros, and J. M. Redwing, IEEE Electron Device Lett. 20, 323 (1999).
7.W. Nagy, S. Singhal, R. Borges, J. W. Johnson, J. D. Brown, R. Ther-rien, A. Chaudhari, A. W. Hanson, J. Riddle, S. Booth, P. Rajagopal, E. L. Piner, and K. J. Linthicum, IEEE MTT-S Int. Microw. Symp. Dig. 483 (2005).
9.T. Pinnington, D. D. Koleske, J. M. Zahler, C. Ladous, Y.-B. Park, M. H. Crawford, M. Banas, G. Thaler, M. J. Russell, S. M. Olson, and H. A. Atwater, J. Cryst. Growth 310, 2514 (2008).
10.C. Wetzel, T. Suski, J. W. Ager III, E. R. Weber, E. E. Haller, S. Fischer, B. K. Meyer, R. J. Molnar, and P. Perlin, Phys. Rev. Lett. 78, 3923 (1997).
12.M. Rudziński, V. Desmaris, P. A. van Hal, J. L. Weyher, P. R. Hageman, K. Dynefors, T. C. Rödle, H. F. F. Jos, H. Zirath, and P. K. Larsen, phys. stat. sol. (c) 3, 2231 (2006).
16.S. Kabi, D. Biswas, and S. Panda, International Conference on Computers and Devices for Communication 2009.
20.A. Y. Cho, Am. Inst. Physics, New York (1994).
21.D. F. Storm, D. S. Katzer, J. A. Mittereder, S. C. Binari, B. V. Shanabrook, X. Xu, D. S. McVey, R. P. Vaudo, and G. R. Brandes, J. Cryst. Growth 281, 32 (2005).
24.O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, and L. F. Eastman, J. Appl. Phys. 85, 3222 (1999).
27.Bede Scientific, Inc., USA.
28.B.-T. Liou, S.-H. Yen, and Y.-K. Kuob, Proceedings of SPIE 5628 (SPIE, Bellingham, WA, 2005).
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In this work, cluster tool (CT) Plasma Assisted Molecular Beam Epitaxy (PA-MBE) grown AlGaN/GaN heterostructure on c-plane (0 0 0 1) sapphire (Al2O3) were investigated by High Resolution X-ray Diffraction (HRXRD), Room Temperature Raman Spectroscopy (RTRS), and Room Temperature Photoluminescence (RTPL). The effects of strain and doping on GaN and AlGaN layers were investigated thoroughly. The out-of-plane (‘c’) and in-plane (‘a’) lattice parameters were measured from RTRS analysis and as well as reciprocal space mapping (RSM) from HRXRD scan of (002) and (105) plane. The in-plane (out-of plane) strain of the samples were found to be −2.5 × 10−3(1 × 10−3), and −1.7 × 10−3(2 × 10−3) in GaN layer and 5.1 × 10−3 (−3.3 × 10−3), and 8.8 × 10−3(−1.3 × 10−3) in AlGaN layer, respectively. In addition, the band structures of AlGaN/GaN interface were estimated by both theoretical (based on elastic theory) and experimental observations of the RTPL spectrum.
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