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Fabrication of 5-20 nm thick β
10.D. Choi, B. Wang, S. Chung, X. Liu, A. Darbal, A. Wise, N. T. Nuhfer, K. Barmak, A. P. Warren, K. R. Coffey et al., J. Vac. Sci. Technol. A 29, 051512 (2011).
17.M. O’Keefe, J. Grant, and J. Solomon, J. Electron. Mater. 25, 962 (1995).
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A technique to fabricate 5 to 20 nm thick sputter deposited
β W films on SiO2 and Si substrates is presented. This is achieved by growing
tungsten on a 5 nm SiO2 layer or in an oxygen controlled environment by flowing 2 sccm of O2 during deposition.
X-ray photoelectron spectroscopy,
X-ray diffraction and reflectivity studies were performed to determine the phase and thickness of tungsten
films. These results demonstrate a technique to grow this film on bare Si or a SiO2 substrate, which can enable growth on the bottom of a write unit in a non-volatile spin logic device.
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