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/content/aip/journal/adva/4/12/10.1063/1.4903368
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/content/aip/journal/adva/4/12/10.1063/1.4903368
2014-12-03
2016-12-10

Abstract

In this work, the effects of vertical electric field on the electronic and optical properties of strained semi-spheroid-shaped InAs/GaAs quantum dot (QD) coupled to its wetting layer (WL) aimed to enhance the nonlinear optical properties were investigated. The dependence of energy eigenvalues of S- and P- states and intersubband P-to-S transition energy on applied electric field was studied. A ∼∓ߙ10 meV Stark shift in the intersubband P-to-S transition energy was calculated for a semi-spheroid-shaped QD with height of 5 nm and base-length of 20 nm when bias voltage was varied from 0 V to ±0.8V. The dependence of transition dipole moment and linear and nonlinear optical properties of the system on bias voltage was also studied. It was concluded that increasing the bias voltage from -0.8V to +0.8V leads to increase in figure of merit of the system from ∼0.153 to ∼0.198.

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