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Here, we report the synthesis of high quality monolayer graphene on the pre-treated copper (Cu) foil by chemical vapor deposition method. The pre-treatment process, which consists of pre-annealing in a hydrogen ambient, followed by diluted nitric acid etching of Cu foil, helps in removing impurities. These impurities include native copper oxide and rolling lines that act as a nucleation center for multilayer graphene. Raman mapping of our graphene grown on pre-treated Cu foil primarily consisted of ∼98% a monolayer graphene with as compared to 75 % for the graphene grown on untreated Cu foil. A high hydrogen flow rate during the pre-annealing process resulted in an increased I/I ratio of graphene up to 3.55. Uniform monolayer graphene was obtained with a I/I ratio and sheet resistance varying from 1.84 – 3.39 and 1110 – 1290 Ω/□, respectively.


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