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We report that chalcopyrite CuInSe thin films were grown on free-standing N-polar GaN (000 ) by molecular beam epitaxy. X-ray diffraction showed that the CuInSe thin film was grown in (112) orientation, and its peak of rocking curve with full width at half maximum of about 897.8 arc-sec indicated the epitaxial growth of CuInSe (112) film on N-polar GaN. Microstructure analysis of the CuInSe showed that the large lattice mismatch (28.5%) between CuInSe and GaN is accommodated by domain matching, and no interface reaction occurs between CuInSe and GaN. Our experimental results show that GaN is stable for the epitaxial growth of CuInSe thin film, which exhibits a promising potential for optoelectronic applications.


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