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The growth of heteroepitaxial CuInSe2
on free-standing N-polar GaN
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We report that chalcopyrite CuInSe2
thin films were grown on free-standing N-polar GaN (000
) by molecular beam epitaxy. X-ray diffraction showed that the CuInSe2
thin film was grown in (112) orientation, and its peak of rocking curve with full width at half maximum of about 897.8 arc-sec indicated the epitaxial
growth of CuInSe2 (112) film on N-polar GaN. Microstructure analysis of the CuInSe2 showed that the large lattice mismatch (28.5%) between CuInSe2 and GaN is accommodated by domain matching, and no interface reaction occurs between CuInSe2 and GaN. Our experimental results show that GaN is stable for the epitaxial
growth of CuInSe2
thin film, which exhibits a promising potential for optoelectronic applications.
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