No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Optically and thermally controlled terahertz metamaterial via transition between direct and indirect electromagnetically induced transparency
5.A. H. Aly, S.-W. Ryu, H.-T. Hsu, and C.-J. Wu, Materials Chem. Phys. 113, 328 (2009).
6.J. Gu, R. Singh, Z. Tian, W. Cao, Q. Xing, M. He, J. W. Zhang, J. Han, H. T. Chen, and W. Zhang, Appl. Phys. Lett. 97, 071102 (2010).
9.Ranjan Singh, Dibakar Roy Chowdhury, Jie Xiong, Hao Yang, Abul K. Azad, Antoinette J. Taylor, Q. X. Jia, and Hou-Tong Chen, Appl. Phys. Lett. 103, 061117 (2013).
16.J. Gu, R. Singh, X. Liu, X. Zhang, Y. Ma, S. Zhang, S. A. Maier, Z. Tian, A. K. Azad, H. T. Chen, A. J. Taylor, J. Han, and W. Zhang, Nat. Comms. 3, 1151 (2012).
17.Ranjan Singh, Ibraheem Al-Naib, Dibakar Roy Chowdhury, Longqing Cong, Carsten Rockstuhl, and Weili Zhang, Appl. Phys. Lett. 105, 081108 (2014).
18.Ranjan Singh, Wei Cao, Ibraheem Al-Naib, Longqing Cong, Withawat Withayachumnankul, and Weili Zhang, Appl. Phys. Lett. 105, 171101 (2014).
21.Ansoft, H. F. S. S. ver. 11. Ansoft Corporation, Pittsburgh, PA (2007).
24.Y. S. Lee, Principles of Terahertz Science and Technology (Springer, New York, 2008), Chap. 5, p. 175.
Article metrics loading...
This passage presents a design of tunable terahertz metamaterials via transition between indirect and direct electromagnetically induced transparency (EIT) effects by changing semiconductor InSb’s properties to terahertz wave under optical and thermal stimuli. Mechanical model and its electrical circuit model are utilized in analytically calculating maximum transmission of transparency window. Simulated results show consistency with the analytical expressions. The results show that the metamaterials hold 98.4% modulation depth at 189 GHz between 300 K, σ
=256000 S/m, and 80 K, σ
=0.0162 S/m conditions , 1360 ps recovery time of the excited electrons in InSb under optical stimulus at 300 K mainly considering the direct EIT effect, and minimum bandwidth 1 GHz.
Full text loading...
Most read this month