Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/adva/4/2/10.1063/1.4866981
1.
1.M. Finetti, P. Negrini, S. Solmi, and D. Nobili, “Electrical properties and stability of supersaturated phosphorus-doped silicon layers,” Journal of the Electroche-mical Society 128, 13131317 (1981).
http://dx.doi.org/10.1149/1.2127626
2.
2.S. Solmi, A. Parisini, R. Angelucci, and A. Armigliato, “Dopant and carrier concentration in Si in equilibrium with monoclinic Si P precipitates,” Physical Review B 53, 78367841 (1996).
http://dx.doi.org/10.1103/PhysRevB.53.7836
3.
3.R. L.-Y. Sah, Robert N. Noyce, and William Shockley, “Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics,” Proceedings of the Institute of Radio Engineers 45(9), 12281243 (1957).
4.
4.S. Solmi and D. Nobili, “High concentration diffusivity and clustering of arsenicand phosphorus in silicon,” Journal of Applied Physics 83, 24842490 (1998).
http://dx.doi.org/10.1063/1.367008
5.
5.J. Ostoja, F. Gueri, P. Negrini, and S. Solmi, “The effects of phosphorus precipitation on the open circuit voltage in n /p silicon solar cells,” Solar Cells 11, 112 (1984).
http://dx.doi.org/10.1016/0379-6787(84)90114-5
7.
7.Mohamed M. Hilali, Kenta Nakayashiki, and Abasifreke Ebong, “Ajeet Rohatgi. High-efficiency (19%)Screen-printed Textured Cells on Low-resistivity Float-zone Silicon with High Sheet-resistance Emitters. Progress in photovoltaics: Research and Applications,” Appl. 14, 135144 (2006).
8.
8.M. Hörteis and S. W. Glunz, “Fine line printed silicon solar cells exceeding 20% efficiency. Progress in Photovoltaics: Research and Applications,” Appl. 16, 555560 (2008).
9.
9.V. Yelundur, K. Nakayashiki, M. Hilali, and A. Rohatgi, “Implementation of a homogeneous high-sheet-resistance emitter inmulticrystalline silicon solar cells,” in IEEE. Conference Record of the 31th IEEE Photovoltaic Specialists Conference (IEEE, New York, 2005) pp. 959962.
10.
10.A. Ebong, V. Upadhyaya, B. Rounsaville, D. S. Kim, K. Tate, and A. Rohatgi, “18% large area screen-printed solar cells on textured MCZ silicon with high sheet resistance emitter,” in IEEE. Conference Record of the 4th IEEE Photovoltaic Energy Conversion (IEEE, New York, 2006) pp. 13261329.
11.
11.B. Bazer-Bachi, E. Fourmond, P. Papet, L. Bounaas, O. Nichiporuk, N. Le Quang, and M. Lemiti, “Higher emitter quality by reducing inactive phosphorus,” Solar Energy Materials & Solar Cells 105, 137141 (2012).
http://dx.doi.org/10.1016/j.solmat.2012.06.007
12.
12.P. Negrini, D. Nobili, and S. Solmi, “Kinetics of phosphorus predeposition in silicon using POCl3,” Journal of the Electrochemical Society 122, 12541260 (1975).
http://dx.doi.org/10.1149/1.2134437
http://aip.metastore.ingenta.com/content/aip/journal/adva/4/2/10.1063/1.4866981
Loading
/content/aip/journal/adva/4/2/10.1063/1.4866981
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/adva/4/2/10.1063/1.4866981
2014-02-25
2016-12-10

Abstract

Control of the oxidation process is one key issue in producing high-quality emitters for crystalline silicon solar cells. In this paper, the oxidation parameters of pre-oxidation time, oxygen concentration during pre-oxidation and pre-deposition and drive-in time were optimized by using orthogonal experiments. By analyzing experimental measurements of short-circuit current, open circuit voltage, series resistance and solar cell efficiency in solar cells with different sheet resistances which were produced by using different diffusion processes, we inferred that an emitter with a sheet resistance of approximately 70 Ω/□ performed best under the existing standard solar cell process. Further investigations were conducted on emitters with sheet resistances of approximately 70 Ω/□ that were obtained from different preparation processes. The results indicate that emitters with surface phosphorus concentrations between 4.96 × 1020 cm−3 and 7.78 × 1020 cm−3 and with junction depths between 0.46 μm and 0.55 μm possessed the best quality. With no extra processing, the final preparation of the crystalline silicon solar cell efficiency can reach 18.41%, which is an increase of 0.4% compared to conventional emitters with 50 Ω/□ sheet resistance.

Loading

Full text loading...

/deliver/fulltext/aip/journal/adva/4/2/1.4866981.html;jsessionid=zx2VSPPbOu9pRn_KdjOP-rLM.x-aip-live-06?itemId=/content/aip/journal/adva/4/2/10.1063/1.4866981&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=aipadvances.aip.org/4/2/10.1063/1.4866981&pageURL=http://scitation.aip.org/content/aip/journal/adva/4/2/10.1063/1.4866981'
Right1,Right2,Right3,