Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
1. Minamata Convention on Mercury: Report of United Nations Environment Programme, UNEP(DTIE)/Hg/INC5/7”, (2013).
2. J. Han, M. H. Crawford, R. J. Shul, J. J. Figiael, M. Banas, L. Zhang, Y. K. Song, H. Zhou, and A. C. V. Nurmikko, Appl. Phys. Lett. 73, 1688 (1998).
3. A. Kinoshita, H. Hirayama, M. Ainoya, A. Hirata, and Y. Aoyagi, Appl. Phys. Lett. 77, 175 (2000).
4. H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takaano, K. Tsubaki, and N. Kamata, Phys, Stat. solidi A206, 1176 (2009).
5. K. Kawasaki, C. Koike, M. Takeuchi, and Y. Aoyagi, Appl. Phys. Lett. 89, 261114 (2006).
6. V. Adivarahan, A. Heidari, B. Zhang, Q. Fareed, M. Islam, S. Hwang, K. Balakrishnan, and A. Khan, Appl. Phys. Express 2, 0921 (2009).
7. M. Takeuchi, T. Maegawa, H. Shimizu, S. Ooishi, T. Ohtsuka, and Y. Aoyagi, Appl. Phys. Letters 94, 061117 (2009).
8. Y. Aoyagi, M. Takeuchi, S. Iwai, and H. Hirayama, AIP Advances 2, 0012177 (2012).

Data & Media loading...


Article metrics loading...



A vertical ultraviolet (UV) light-emitting diode (LED) that does not require substrate removal is developed. Spontaneous via holes are formed in n-AlN layer epitaxially grown on a high conductive n+Si substrate and the injected current flows directly from the p-electrode to high doped n+ Si substrate through p-AlGaN, multi-quantum wells, n-AlGaN and spontaneous via holes in n-AlN. The spontaneous via holes were formed by controlling feeding-sequence of metal-organic gas sources and NH and growth temperature in MOCVD. The via holes make insulating n-AlN to be conductive. We measured the current-voltage, current-light intensity and emission characteristics of this device. It exhibited a built-in voltage of 3.8 V and emission was stated at 350 nm from quantum wells with successive emission centered at 400 nm. This UV LED can be produced, including formation of n and p electrodes, without any resist process.


Full text loading...


Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd