Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
1. V. G. Dmitriev, G. G. Gurzadyan, and D. N. Nikogosyan, Handbook for nonlinear optical crystal., 3d ed. (Springer, Berlin 1999), V. 64, 413 p. p 141.
2. K. L. Vodopyanov, L. A. Kulevskii, V. G. Voevodin, A. I. Gribenyukov, K. R. Allakhverdiev, and T. A. Kerimov, “High efficiency middle IR parametric superradiance in ZnGeP2 and GaSe crystals pumped by an erbium laser,” Optics Commun. 83(5,6). 322326 (1991).
3. D. R. Suhre, N. B. Singh, V. Balakrishna, N. C. Fernelius, and F. K. Hopkins, “Improved crystal quality and harmonic generation in GaSe doped with indium,” Optics Letters 22(11), 775777 (1997).
4. Z.-S. Feng, Z.-H. Kang, F.-G. Wu, J.-Yu. Gao, Yu. Jiang, H.-Z. Zhang, Yu. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Optics Express 16(13). 99789985 (2008).
5. G. B. Abdullaev, K. R. Allakhverdiev, S. S. Babaev, E. Yu. Salaev, M. M. Tagyev, L. K. Vodopyanov, and L. V. Golubev, “Raman scattering from GaSe1-xTex,” Solid State Commun. 34. 125128 (1980).
6. Yu. M. Andreev, V. V. Atuchin, G. V. Lanskii, A. N. Morozov, L. D. Pokrovsky, S. Yu. Sarkisov, and O. V. Voevodina, “Growth, real structure and applications of GaSe1-xSx crystals,” Mater. Sci. Eng. B 128, 205210 (2006).
7. H.-Z. Zhang, Z.-H. Kang, Yu. Jiang, J.-Yu. Gao, F.-G. Wu, Z.-S. Feng, Yu. M. Andreev, G. V. Lanskii, A. N. Morozov, E. I. Sachkova, and S. Yu. Sarkisov, “SHG phase matching in GaSe and mixed GaSe1-xSx, x ≤ 0.412, crystals at room temperature,” Optics Express 16(13) 99519957 (2008).
8. V. V. Atuchin, N. F. Beisel, K. A. Kokh, V. N. Kruchinin, I. V. Korolkov, L. D. Pokrovsky, A. R. Tsygankova, and A. E. Kokh, “Growth and microstructure of heterogeneous crystal GaSe:InS,” CrystEngComm 15, 13651369 (2013).
9. W.-C. Chu, S.-A. Ku, H. J. Wang, C. W. Luo, Yu. M. Andreev, G. Lanskii, and T. Kobayashi, “Widely linear and non-phase-matched optics-to-THz conversion on GaSe:Te crystals,” Optics Letters 37(5), 945947 (2012).
10. Z.-S. Feng, J. Y. Guo, Z.-H. Kang, Y. Jiang, J.-Y. Gao, J.-J. Xie, L.-M. Zhang, V. Atuchin, Yu. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulfur doped GaSe for mid-IR applications,” Appl. Phys. B 108(3), 545552 (2012).
11. F.-G. Wu, Yu. M. Andreev, G. V. Lanskii, V. V. Atuchin, T. A. Gavrilova, and S. Yu. Sarkisov, “Modified GaSe crystals for laser systems applications,” 9th International Conference on Modification of Materials with Particle Beams and Plasma Flows / Tomsk, Russia, 21–26 September 2008. P. 257260.
12. V. Petrov, V. L. Panyutin, A. Tyazhev, G. Marchev, A. I. Zagumennyi, F. Rotermund, F. Noack, K. Miyata, L. D. Iskhakova, and A. F. Zerrouk, “GaS0.4Se0.6: Relevant properties and potential for 1064 nm pumped mid-IR OPOs and OPGs operating above 5 μm,” Las. Phys. 21(4) 774781 (2011).
13. A. E. Telminov, A. G. Sitnikov, A. N. Panchenko, D. E. Genin, S. Yu. Sarkisov, S. A. Beremaya, Z. V. Korotchenko, and E. V. Vavilin, “Damage Threshold of Modified GaSe Crystals under Irradiation of Pulsed CO2 Laser with Inductive Energy Storage and SOS-diodes,” Proc. of 10th Conf. on modification of Materials with Particle Beams and Plasma Flows, 19–24 September 2010, Tomsk, Russia. P. 323324.
14. Y.-F. Zhang, R. Wang, Z.-H. Kang, L.-L. Qu, Y. Jiang, J.-Y. Gao, Yu. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, and V. V. Zuev, “AgGaS2- and Al-doped GaSe Crystals for IR Applications,” Opt. Commun. 284, 16771681 (2011).
15. Yu. M. Andreev, V. V. Badikov, V. G. Voevodin, L. G. Geiko, P. P. Geiko, M. V. Ivashenko, A. I. Karapuzikov, and I. V. Sherstov, “Radiation resistance of nonlinear crystals at a wavelength of 9.55 μm,” Quant. Electron. 31(12). 10751078 (2001).
16. K. A. Kokh, B. G. Nenashev, A. E. Kokh, and G. Yu. Shvedenkov, “Application of a rotating heat field in Bridgman-Stockbarger crystal growth,” J. Cryst. Growth 275(1–2), e2129e2134 (2005).
17. A. Vaško, “On the absorption and reflection spectrum of amorphous selenium in the infrared region,” Czech. J. Phys. B 15(1), 170177 (1965).
18. K. L. Vodopyanov, S. B. Mirov, V. G. Voevodin, and P. G. Shunemann, “Two-photon absorption in GaSe and CdGeAs2,” Opt. Commun. 155, 4750 (1998).

Data & Media loading...


Article metrics loading...



The impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals with four and five different doping concentrations, respectively, has been studied in comparison with that of undoped GaSe. The inconsistence of the visual criterion of the damage threshold determination has been demonstrated. The multiphoton absorption and thermal effect have been identified as key factors limiting fs and ns pulse pump intensities, respectively. High advantages in the limit pump intensity as up to 50% for optimally indium-doped crystal and up to 4.5 times for optimally sulfur-doped crystal have been demonstrated under fs pulses expose.


Full text loading...


Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd