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Influence of the anodic etching current density on the morphology of the
porous SiC layer
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In this report, we fabricated a porous layer in amorphous SiC thin films by
using constant-current anodic etching in an electrolyte of aqueous diluted hydrofluoric acid. The morphology of the
porous amorphous SiC layer changed as the anodic current density changed: At low
the porous layer had a low pore density and consisted of small pores that branched
downward. At moderate current
density, the pore size and depth increased, and the pores grew
perpendicular to the surface, creating a columnar pore structure. At high
the porous structure remained perpendicular, the pore size increased, and the pore
depth decreased. We explained the changes in pore size and depth at high current density by the growth
of a silicon oxide
layer during etching at the tips of the pores.
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