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/content/aip/journal/adva/4/3/10.1063/1.4869020
1.
1. E. J. Miller, X. Z. Dang, H. H. Wieder, P. M. Asbeck, E. T. Yu, G. J. Sullivan, and J. M. Redwing, J. Appl. Phys. 87, 8070 (2000).
http://dx.doi.org/10.1063/1.373499
2.
2. D. W. Yan, H. Lu, D. S. Cao, D. J. Chen, R. Zhang, and Y. D. Zheng, Appl. Phys. Lett. 97, 153503 (2010).
http://dx.doi.org/10.1063/1.3499364
3.
3. L. Xia, A. Hanson, T. Boles, and D. Jin, Appl. Phys. Lett. 102, 113510 (2013).
http://dx.doi.org/10.1063/1.4798257
4.
4. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, IEEE Trans. Electron Devices 48, 560 (2001).
http://dx.doi.org/10.1109/16.906451
5.
5. M. Higashiwaki, T. Matsui, and T. Mimura, IEEE Electron Device Lett. 27, 16 (2006).
http://dx.doi.org/10.1109/LED.2005.860884
6.
6. G. Li, T. Zimmermann, Y. Cao, C. Lian, X. Xing, R. Wang, P. Fay, H. G. Xing, and D. Jena, IEEE Electron Device Lett. 31, 954 (2010).
http://dx.doi.org/10.1109/LED.2010.2052912
7.
7. J. G. Felbinger, M. Fagerlind, O. Axelsson, N. Rorsman, X. Gao, S. Guo, W. J. Schaff, and L. F. Eastman, IEEE Electron Device Lett. 32, 889 (2011).
http://dx.doi.org/10.1109/LED.2011.2143384
8.
8. Z. Q. Fang, D. C. Look, and P. Visconti, Appl. Phys. Lett. 78, 2178 (2001).
http://dx.doi.org/10.1063/1.1361273
9.
9. A. Sasikumar, A. Arehart, S. Kolluri, M. H. Wong, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, and S. A. Ringel, IEEE Electron Device Lett. 33, 658 (2012).
http://dx.doi.org/10.1109/LED.2012.2188710
10.
10. J. M. Tirado, J. L. Sanchez-Rojas, and J. I. Izpura, IEEE Trans. Electron Devices 54, 410 (2007).
http://dx.doi.org/10.1109/TED.2006.890592
11.
11. M. Gassoumi, M. M. Ben Salem, S. Saadaoui, B. Grimbert, J. Fontaine, C. gaquiere, and H. Maaref, Microelectron. Eng. 88, 370 (2011).
http://dx.doi.org/10.1016/j.mee.2010.09.027
12.
12. P. Kordoš, D. Donoval, M. Florovič, J. Kováč, and D. Gregučová, Appl. Phys. Lett. 92, 152113 (2008).
http://dx.doi.org/10.1063/1.2911727
13.
13. X. H. Ma, J. J. Zhu, X. Y. Liao, T. Yue, W. W. Chen, and Y. Hao, Appl. Phys. Lett. 103, 033510 (2013).
http://dx.doi.org/10.1063/1.4813912
14.
14. E. H. Nicollian and A. Goetzberger, Microelectron. Reliab. 7, 164 (1968).
15.
15. R. Stoklas, D. Gregušová, J. Novák, A. Vescan, and P. Kordoš, Appl. Phys. Lett. 93, 124103 (2008).
http://dx.doi.org/10.1063/1.2990627
16.
16. A. Pérez-Tomás, A. Fontserè, S. Sánchez, M. R. Jennings, P. M. Gammon, and Y. Cordier, Appl. Phys. Lett. 102, 023511 (2013).
http://dx.doi.org/10.1063/1.4788722
17.
17. X. Sun, O. I. Saadat, K. S. Chang-Liao, T. Palacios, S. Cui, and T. P. Ma, Appl. Phys. Lett. 102, 103504 (2013).
http://dx.doi.org/10.1063/1.4795717
18.
18. S. Huang, Q. Jiang, S. Yang, Z. Tang, and K. J. Chen, IEEE Electron Device Lett. 34, 193 (2013).
http://dx.doi.org/10.1109/LED.2012.2229106
19.
19. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, Hoboken, NJ, 2006).
20.
20. S. Imanaga and H. Kawai, J. Appl. Phys. 82, 5843 (1997).
http://dx.doi.org/10.1063/1.366453
21.
21. M. Miczek, C. Mizue, T. Hashizume, and B. Adamowicz, J. Appl. Phys. 103, 104510 (2008).
http://dx.doi.org/10.1063/1.2924334
22.
22. O. Ambacher, M. Eickhoff, A. Link, M. Hermann, M. Stutzmann, F. Bernardini, V. Fiorentini, Y. Smorchkova, J. Speck, U. Mishra, W. Schaff, V. Tilak, and L. F. Eastman, Phys. Status Solidi C 0, 1878 (2003).
http://dx.doi.org/10.1002/pssc.200303138
23.
23. H. K. Gummel, IEEE Trans. Electron Devices 11, 455 (1964).
http://dx.doi.org/10.1109/T-ED.1964.15364
24.
24. S. S. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed (JohnWiley & Sons, New Jersey, 2007), pp. 213215.
25.
25. W. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952).
http://dx.doi.org/10.1103/PhysRev.87.835
26.
26. R. N. Hall, Phys. Rev. 87, 387 (1952).
http://dx.doi.org/10.1103/PhysRev.87.387
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/content/aip/journal/adva/4/3/10.1063/1.4869020
2014-03-17
2016-12-04

Abstract

Trap states in AlGaN/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and AlO/AlGaN/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×1013 eV−1·cm−2. AlO gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs.

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