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1. E. J. Miller, X. Z. Dang, H. H. Wieder, P. M. Asbeck, E. T. Yu, G. J. Sullivan, and J. M. Redwing, J. Appl. Phys. 87, 8070 (2000).
2. D. W. Yan, H. Lu, D. S. Cao, D. J. Chen, R. Zhang, and Y. D. Zheng, Appl. Phys. Lett. 97, 153503 (2010).
3. L. Xia, A. Hanson, T. Boles, and D. Jin, Appl. Phys. Lett. 102, 113510 (2013).
4. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, IEEE Trans. Electron Devices 48, 560 (2001).
5. M. Higashiwaki, T. Matsui, and T. Mimura, IEEE Electron Device Lett. 27, 16 (2006).
6. G. Li, T. Zimmermann, Y. Cao, C. Lian, X. Xing, R. Wang, P. Fay, H. G. Xing, and D. Jena, IEEE Electron Device Lett. 31, 954 (2010).
7. J. G. Felbinger, M. Fagerlind, O. Axelsson, N. Rorsman, X. Gao, S. Guo, W. J. Schaff, and L. F. Eastman, IEEE Electron Device Lett. 32, 889 (2011).
8. Z. Q. Fang, D. C. Look, and P. Visconti, Appl. Phys. Lett. 78, 2178 (2001).
9. A. Sasikumar, A. Arehart, S. Kolluri, M. H. Wong, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, and S. A. Ringel, IEEE Electron Device Lett. 33, 658 (2012).
10. J. M. Tirado, J. L. Sanchez-Rojas, and J. I. Izpura, IEEE Trans. Electron Devices 54, 410 (2007).
11. M. Gassoumi, M. M. Ben Salem, S. Saadaoui, B. Grimbert, J. Fontaine, C. gaquiere, and H. Maaref, Microelectron. Eng. 88, 370 (2011).
12. P. Kordoš, D. Donoval, M. Florovič, J. Kováč, and D. Gregučová, Appl. Phys. Lett. 92, 152113 (2008).
13. X. H. Ma, J. J. Zhu, X. Y. Liao, T. Yue, W. W. Chen, and Y. Hao, Appl. Phys. Lett. 103, 033510 (2013).
14. E. H. Nicollian and A. Goetzberger, Microelectron. Reliab. 7, 164 (1968).
15. R. Stoklas, D. Gregušová, J. Novák, A. Vescan, and P. Kordoš, Appl. Phys. Lett. 93, 124103 (2008).
16. A. Pérez-Tomás, A. Fontserè, S. Sánchez, M. R. Jennings, P. M. Gammon, and Y. Cordier, Appl. Phys. Lett. 102, 023511 (2013).
17. X. Sun, O. I. Saadat, K. S. Chang-Liao, T. Palacios, S. Cui, and T. P. Ma, Appl. Phys. Lett. 102, 103504 (2013).
18. S. Huang, Q. Jiang, S. Yang, Z. Tang, and K. J. Chen, IEEE Electron Device Lett. 34, 193 (2013).
19. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, Hoboken, NJ, 2006).
20. S. Imanaga and H. Kawai, J. Appl. Phys. 82, 5843 (1997).
21. M. Miczek, C. Mizue, T. Hashizume, and B. Adamowicz, J. Appl. Phys. 103, 104510 (2008).
22. O. Ambacher, M. Eickhoff, A. Link, M. Hermann, M. Stutzmann, F. Bernardini, V. Fiorentini, Y. Smorchkova, J. Speck, U. Mishra, W. Schaff, V. Tilak, and L. F. Eastman, Phys. Status Solidi C 0, 1878 (2003).
23. H. K. Gummel, IEEE Trans. Electron Devices 11, 455 (1964).
24. S. S. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed (JohnWiley & Sons, New Jersey, 2007), pp. 213215.
25. W. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952).
26. R. N. Hall, Phys. Rev. 87, 387 (1952).

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Trap states in AlGaN/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and AlO/AlGaN/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×1013 eV−1·cm−2. AlO gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs.


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