Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos, and A. A. Firsov, Nature 438, 197 (2005).
2. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004).
3. K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, Proc. Natl. Acad. Sci. USA 102, 10451 (2005).
4. A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, Rev. Mod. Phys. 81,109 (2009).
5. X. –F. Li, L. –L. Wang, K. –Q. Chen, and Y. Luo, J. Phys.: Condens. Matter 24, 095801 (2012).
6. M. Evaldsson, I. V. Zozoulenko, H. Xu, and T. Heinzel, Phys. Rev. B 78, 161407R (2008).
7. M. Dvorak, W. Oswald, and Z. Wu, Scientific Reports 3, 2289 (2013).
8. C. S. Park, Y. Zhao, J.–H. Lee, D. Whang, Y. Shon, Y. –H. Song, and C. J. Lee, Appl. Phys. Lett. 102, 032106 (2013).
9. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nature. Nanotechnol. 6, 147 (2011).
10. D. L. Greenaway, and R. Nitsche, J. Phys. Chem. Solids 26, 1445 (1965).
11. R. Fivaz and E. Mooser, Phys. Rev. 163, 743 (1967).
12. B. L. Evans and R. A. Hazelwood, Phys. Stat. Sol. 4, 181 (1971).
13. C. F. van Bruggen, C. Haas, and G. A. Wiegers, J. Solid State Chem. 27, 9 (1979).
14. E. Fortin and W. M. Sears, J. Phys. Chem. Solids 43 (9), 881 (1982).
15. R. V. Coleman, B. Giambattista, P. K. Hansma, A. Johnshon, W. W. McNairy, and C. G. Slough, Adv. Phys. 37, 559 (1988).
16. J. N. Coleman et al., Science 331, 568 (2011).
17. K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, Proc. Natl. Acad. Sci. 102, 10451 (2005).
18. H. Wang, L. Yu, Y.–H. Lee, Y. Shi, A. Hsu, M. L. Chin, L.–J. Li, M. Bubey, J. Kong, and T. Palacios, Nano Lett. 12, 4674 (2012).
19. I. Popov, G. Sifert, and D. Tománek, Phys. Rev. Lett. 108, 1568021 (2012).
20. V. Podozorov, M. E. Gershenson, C. Kloc, R. Zeis, and E. Bucher, Appl. Phys. Lett. 84, 3301 (2004).
21. W. Chen, E. J. G. Santos, W. Zhu, E. Kaxirus, and Z. Zhang, Nano Lett. 13, 509 (2013).
22. S. Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Mathews, J. Li. J. C. Grossman, and J. Wu, Nano Lett. 12, 5576 (2012).
23. C. K. Sumesh, K. D. Patel, V. M. Pathak, and R. Srivastav, Cryst. Res. Technol. 46, 61 (2011).
24. S. Larentis, B. Fallahazad, and E. Tutuc, Appl. Phys. Lett. 101, 2231041 (2012).
25. G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993).
26. J. P. Perdew, in Electronic Structure of Solids, edited by Ziesche and H. Eschrig (Akademie Verlag, Berlin, 1991), p. 11.
27. P. E. Blöchl, Phys. Rev. B 50, 17953 (1994).
28. P. Pulay, Chem. Phys. Lett. 73, 393 (1980).
29. H. J. Monkhorst, J. D. Pack, Phys. Rev. B 13, 5188 (1976).
30. H. B. Michaelson, J. Appl. Phys. 48, 4729 (1977).

Data & Media loading...


Article metrics loading...



Monolayer of MoSe, having a typical direct band gap of ∼1.5 eV, is a promising material for optoelectronic and solar cell applications. When this 2D semiconductor is supported on transition metal substrates, such as Ni(111) and Cu(111), its electronic structure gets modulated. First principles density functional investigation shows the appearance of de-localized mid-gap states in the density of states. The work function of the semiconductor overlayer gets modified considerably, indicating n-type doping caused by the metal contacts. The charge transfer across the metal-semiconductor junction also significantly enhances the chemical reactivity of the MoSe overlayer, as observed by Hydrogen absorption. Furthermore, for Ni contact, there is a signature of induced magnetism in MoSe monolayer.


Full text loading...


Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd