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/content/aip/journal/adva/4/4/10.1063/1.4871080
2014-04-09
2016-12-05

Abstract

Monolayer of MoSe, having a typical direct band gap of ∼1.5 eV, is a promising material for optoelectronic and solar cell applications. When this 2D semiconductor is supported on transition metal substrates, such as Ni(111) and Cu(111), its electronic structure gets modulated. First principles density functional investigation shows the appearance of de-localized mid-gap states in the density of states. The work function of the semiconductor overlayer gets modified considerably, indicating n-type doping caused by the metal contacts. The charge transfer across the metal-semiconductor junction also significantly enhances the chemical reactivity of the MoSe overlayer, as observed by Hydrogen absorption. Furthermore, for Ni contact, there is a signature of induced magnetism in MoSe monolayer.

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/deliver/fulltext/aip/journal/adva/4/4/1.4871080.html;jsessionid=gKYaDp4DboUIntBRyAyEl6nr.x-aip-live-02?itemId=/content/aip/journal/adva/4/4/10.1063/1.4871080&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=aipadvances.aip.org/4/4/10.1063/1.4871080&pageURL=http://scitation.aip.org/content/aip/journal/adva/4/4/10.1063/1.4871080'
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