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High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
2. S. W. Chang et al., IEDM 2013.
4. Han Zhao, Jeff Huang, Yen-Ting Chen, Jung Hwan Yum, Yanzhen Wang, Fei Zhou, Fei Xue, and Jack C. Lee, Appl. Phys. Lett. 95, 253501 (2009).
5. H. D. Trinh, E. Y. Chang, P. W. Wu, Y. Y. Wong, C. T. Chang, Y. F. Hsieh, C. C. Yu, H. Q. Nguyen, Y. C. Lin, K. L. Lin, and M. K. Hudait, Appl. Phys. Lett. 97, 042903 (2010).
6. Zuoguang Liu, Sharon Cui, Pini Shekhter, Xiao Sun, Lior Kornblum, Jie Yang, Moshe Eizenberg, K. S. Chang-Liao, and T. P. Ma, Appl. Phys. Letter. 99, 222104 (2011).
8. H. D. Trinh, G. Brammertz, E. Y. Chang, C. I. Kuo, C. Y. Lu, Y. C. Lin, H. Q. Nguyen, Y. Y. Wong, B. T. Tran, K. Kakushima, and H. Iwai, IEEE Electr. Dev. Lett. 32(6), 752 (2011).
9. R. Timm, A. Fian, M. Hjort, C. Thelander, E. Lind, J. N. Andersen, L.-E. Wernersson, and A. Mikkelsen, Appl. Phys. Lett., 97, 132904 (2010).
12. Hau-Yu Lin, San-Lein Wu, Chao-Ching Cheng, Chih-Hsin Ko, Clement H. Wann, You-Ru Lin, Shoou-Jinn Chang, and Tai-Bor Wu, Appl. Phys. Lett. 98, 123509 (2011).
13. Digh Hisamoto, Wen-Chin Lee, Jakub Kedzierski, Hideki Takeuchi, Kazuya Asano, Charles Kuo, Erik Anderson, Tsu-Jae King, Jeffrey Bokor, and Chenming Hu, IEEE Trans. Electron Devices 47, 2320–2325, (DEC, 2000).
14. Jakub Kedzierski, David M. Fried et al., IEDM 2001, pp. 437–440.
15. Bin Yu, Leland Chang et al., IEDM 2002, pp. 251–254.
16. Byungha Shin, Jonathon B. Clemens, Michael A. Kelly, Andrew C. Kummel, and Paul C. Mclntyre, Appl. Phys. Letter. 96, 252907 (2010).
17. H. D. Trinh, E. Y. Chang, Y. Y. Wong, C. C. Yu, C. Y. Chang, Y. C. Lin, H. Q. Nguyen, and B. T. Tran, Jap JAP. 49, 111201 (2010).
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Two high-k dielectric materials (Al 2O3 and HfO2) were deposited on n-type (100) and (110) InAs surface orientations to investigate physical properties of the oxide/semiconductor interfaces and the interface trap density (Dit). X-ray photoelectron spectroscopy analyses (XPS) for native oxides of (100) and (110) as-grown n-InAs epi wafers show an increase in As-oxide on the (100) surface and an increase in InOx on the (110) surface. In addition, XPS analyses of high-k (Al 2O3 and HfO2) on n-InAs epi show that the intrinsic native oxide difference between (100) and (110) epi surfaces were eliminated by applying conventional in-situ pre-treatment (TriMethyAluminium (TMA)) before the high-k deposition. The capacitance-voltage (C-V) characterization of HfO2 and Al 2O3 MOSCAPs on both types of n-InAs surfaces shows very similar C-V curves. The interface trap density (Dit) profiles show Dit minima of 6.1 × 1012/6.5 × 1012 and 6.6 × 1012/7.3 × 1012 cm−2 eV−1 for Al 2O3 and HfO2, respectively for (100) and (110) InAs surfaces. The similar interface trap density (Dit) on (100) and (110) surface orientation were observed, which is beneficial to future InAs FinFET device with both (100) and (110) surface channel orientations present.
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