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Visible and near-infrared electroluminescence from TiO2
-Si heterostructured device
12. F. Montoncello, M. C. Carotta, B. Cavicchi, M. Ferroni, A. Giberti, V. Guidi, C. Malagu, G. Martinelli, and F. Meinardi, J. Appl. Phys. 94, 1501 (2003).
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We report on visible and near-infrared (NIR) electroluminescence (EL) from the device based on the TiO2/p +-Si heterostructure, in which the TiO2 film is composed of anatase and rutile phases. As the device is applied with sufficiently high forward bias with the positive voltage connecting to p +-Si, the visible EL peaking at ∼600 nm along with the NIR EL centered at ∼810 nm occur simultaneously. It is proposed that the oxygen vacancies in the anatase TiO2 and Ti3+ defect states in the rutile TiO2 are the responsible centers for the visible and NIR EL, respectively.
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