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=Al, Ga, In) compounds: Nearly spin gapless semiconductors
8. G. Z. Xu, E. K. Liu, Y. Du, G. J. Li, G. D. Liu, W. H. Wang, and G. H. Wu, Mat. Sci. 102, 17007 (2013).
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Ti2MnZ (Z=Al, Ga, In) compounds with CuHg2Ti-type structure are predicted to have the different width of band gap in two spin channels and exhibit a nearly spin gapless semiconductivity. There are different origins of the band gap in spin-up and spin-down channels. The width of the band gap can be adjusted by changing the lattice parameter or doping congeners. These compounds are completely-compensated ferrimagnets with a zero magnetic moment.
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