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/content/aip/journal/adva/4/4/10.1063/1.4871407
2014-04-11
2016-12-03

Abstract

In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO/Si (S), Al/HfO/SiO/Si (H), and Al/3HfO/SiO/Si (3H) were examined. The significant observation of electron traps of sample H compares to sample S is found under the double bias capacitance-voltage (C-V) measurements in illumination. Moreover, the photo absorption sensitivity of sample H is higher than S due to the formation of HfO dielectric layer, which leads to larger numbers of carriers crowded through the sweep of V before the domination of tunneling current. Additionally, the HfO dielectric layer would block the electrons passing through oxide from valance band, which would result in less electron-hole (e-h+) pairs recombination effect. Also, it was found that both of the samples S and H show perimeter dependency of positive bias currents due to strong fringing field effect in dark and illumination; while sample 3H shows area dependency of positive bias currents in strong illumination. The non-uniform tunneling current through thin dielectric and through HfO stacking layers are importance to MOS(p) tunneling photo diodes.

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