No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Reversible conductance switching characteristics in a polymer-In2
4. K. Jung, Y. Kim, W. Jung, H. Im, B. Park, J. Hong, J. Lee, J. Park, and J.-K Lee, Appl. Phys. Lett. 97, 233509 (2010).
6. K. Jung, Y. Kim, Y. S. Park, W. Jung, J. Choi, B. Park, H. Kim, W. Kim, J. Hong, and H. Im, J. Appl. Phys. 109, 054511 (2011).
22. Q. Liu, S. Long, W. Wang, S. Tanachutiwat, Y. Li, Q. Wang, M. Zhang, Z. Huo, J. Chen, and M. Liu, IEEE Electron Device Lett. 31, 1299 (2010).
26. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
30. J. Song, A. I. Inamdar, B. U. Jang, K. Jeon, Y. S. Kim, K. Jung, Y. Kim, H. Im, W. Jung, H. Kim, J. P. Hong, Appl. Phys. Express 3, 091101 (2010).
31. Y. Hosoi, Y. Tamai, T. Ohnishi, K. Ishihara, T. Shibuya, Y. Inoue, S. Yamazaki, T. Nakano, S. Ohnishi, N. Awaya, I. H. Inoue, H. Shima, H. Akinaga, H. Takagi, H. Akoh, and Y. Tokura, IEDM Tech. Dig. 793 (2006).
32. D. C. Kim, S. Seo, S. E. Ahn, D.-S. Suh, M. J. Lee, B.-H. Park, I. K. Yoo, I. G. Braek, H.-J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U.-I. Chung, J. T. Moon, and B. I. Ryu, Appl. Phys. Lett. 88, 202102 (2006).
33. I. Baek, M. Lee, S. Seo, M. Lee, D. Seo, D.-S. Suh, J. Park, S. Park, H. Kim, I. Yoo, U.-I. Chung, and J. Moon, IEDM Tech. Dig. 587 (2004).
34. H. Jung, Y. Kim, K. Jung, H. Im, Y. A. Pashkin, O. Astafiev, Y. Nakamura, H. Lee, Y. Miyamoto, and J. S. Tsai, Phys. Rev. B 80, 125413 (2009).
36. H. Wang, S. Baek, J. Song, J. Lee, and S. Lim, Nanotechnology 19, 7 (2008).
Article metrics loading...
A transparent polymer-based resistive switching device containing In2O3 nanocrystals (NCs) is fabricated, and its nonvolatile memory characteristics are evaluated. Very clear reversible counter-clockwise bipolar-type resistive switching phenomena are observed. Stable retention is demonstrated. An Analysis of the temperature dependence of the bistable resistance states reveals additional features, not reported in previous studies, that the observed resistance switching is due to oxygen ions drift-induced redox reactions at the polymer/In2O3 NCs interface. The RESET and SET switching times (τRESET and τSET), which are defined as pulse widths extrapolated by the steepest slopes in the transition region, are τRESET ∼ 550 nsec and τSET ∼ 900 nsec. The authors propose that microscopic potential modification occurring near the polymer/In2O3 NCs boundaries plays a key role in determining resistive switching properties.
Full text loading...
Most read this month