No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Tunable electronic properties of silicon nanowires under strain and electric bias
2. W. C. Wang, C. W. Lin, H. J. Chen, C. W. Chang, J. J. Huang, M. J. Yang, B. Tjahjono, J. J. Huang, W. C. Hsu, and M. J. Chen, ACS Appl. Mater. Interfaces 5, 9752 (2013).
21. V. Passi, F. Ravaux, E. Dubois, and J.-P. Raskin, 23rd IEEE International Conference (MEMS), 464 (2010).
25. K. Tang, R. Qin, J. Zhou, H. Qu, J. Zheng, R. Fei, H. Li, Q. Zheng, Z. Gao, and J. Lu, J. Chem. Phys. C 115, 9458 (2011).
Article metrics loading...
The electronic structure characteristics of silicon nanowires under strain and electric bias are studied using first-principles density functional theory. The unique wire-like structure leads to distinct spatial distribution of carriers, which can be tailored by applying tensile and compressive strains, as well as by an electric bias. Our results indicate that the combined effect of strain and electric bias leads to tunable electronic structures that can be used for piezo-electric devices.
Full text loading...
Most read this month