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We report on electric field effects on electron transport in multi-walled MoS nanotubes (NTs), fabricated using a two-step synthesis method from Mo SI nanowire bundle precursors. Transport properties were measured on 20 single nanotube field effect transistor (FET) devices, and compared with MoS layered crystal devices prepared using identical fabrication techniques. The NTs exhibited mobilities of up to 0.014 cm2V−1s−1 and an / ratio of up to 60. As such they are comparable with previously reported WS nanotube FETs, but materials defects and imperfections apparently limit their performance compared with multilayer MoS FETs with similar number of layers.


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