No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Touch sensors based on planar liquid crystal-gated-organic field-effect transistors
2. T. W. Kelley, P. F. Baude, C. Gerlach, D. E. Ender, D. Muyres, M. A. Haase, D. E. Vogel, and S. D. Theiss, Chem. Mater. 16, 4413 (2004).
5. Y. Kim, and C.-S. Ha, Advances in Organic Light-Emitting Devices (Trans Tech Publications, Limited, 2008).
7. C.-W. Han, K.-M. Kim, S.-J. Bae, H.-S. Choi, J.-M. Lee, T.-S. Kim, Y.-H. Tak, S.-Y. Cha, and B.-C. Ahn, SID’12 Digest 43, 279 (2012).
12. H. N. Tsao, D. M. Cho, I. Park, M. R. Hansen, A. Mavrinskiy, D. Y. Yoon, R. Graf, W. Pisula, H. W. Spiess, and K. Müllen, J. Am. Chem. Soc. 133, 2605 (2011).
16. K. Myny, S. Steudel, P. Vicca, M. J. Beenhakkers, N. A.J.M. van Aerle, G. H. Gelinck, J. Genoe, W. Dehaene, and P. Heremans, Solid-State Electron. 53, 1220 (2009).
19. S. Nam, Y.-G. Ko, S. G. Hahm, S. Park, J. Seo, H. Lee, H. Kim, M. Ree, and Y. Kim, NPG Asia Mater. 5, e33 (2013).
20. J. Seo, S. Park, S. Nam, H. Kim, and Y. Kim, Sci. Rep. 3, 2452 (2013).
21. J. Seo and Y. Kim, Private Communications (2014).
Article metrics loading...
We report a tactile touch sensor based on a planar liquid crystal-gated-organic field-effect transistor (LC-g-OFET) structure. The LC-g-OFET touch sensors were fabricated by forming the 10 μm thick LC layer (4-cyano-4′-pentylbiphenyl - 5CB) on top of the 50 nm thick channel layer (poly(3-hexylthiophene) - P3HT) that is coated on the in-plane aligned drain/source/gate electrodes (indium-tin oxide - ITO). As an external physical stimulation to examine the tactile touch performance, a weak nitrogen flow (83.3 μl/s) was employed to stimulate the LC layer of the touch device. The LC-g-OFET device exhibited p-type transistor characteristics with a hole mobility of 1.5 cm2/Vs, but no sensing current by the nitrogen flow touch was measured at sufficiently high drain (VD) and gate (VG) voltages. However, a clear sensing current signal was detected at lower voltages, which was quite sensitive to the combination of VD and VG. The best voltage combination was VD = −0.2 V and VG = −1 V for the highest ratio of signal currents to base currents (i.e., signal-to-noise ratio). The change in the LC alignment upon the nitrogen flow touch was assigned as the mechanism for the present LC-g-OFET touch sensors.
Full text loading...
Most read this month