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In-situ characterization of trapped charges in amorphous semiconductor films during plasma-enhanced chemical vapor deposition
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The subband-gap absorption current in a hydrogenated amorphous silicon film has been measured during plasma-enhanced chemical vapor deposition. The current is probed by a near-infrared laser while photoexcited carriers are generated under visible laser illumination. The trapped charge density is determined from the magnitude of current under the assumption of carrier generation and recombination kinetics. The result indicates that trapped charges are distributed uniformly in the film during growth, and they are reduced after the growth. The trapped charge density is minimized at a growth temperature of ≈ 473 K.
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