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Identification of photoluminescence P line in indium doped silicon as InSi
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Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium
silicon (P line) was found to depend on the position of a silicon
interstitial rich region, the existence of a SiN
stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon
interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron
silicon. We deduced a defect model consisting of one acceptor and one silicon
interstitial atom denoted by A
, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron
silicon. Using this model we identified the defect responsible for the P line as InSi-Si
in neutral charge state and C
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