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1.
1.H. Kousaka and K. Ono, Plasma Sources Sci. Technol. 12, 273 (2003).
http://dx.doi.org/10.1088/0963-0252/12/2/319
2.
2.M. Nagatsu, K. Naito, A. Ogino, and S. Nanko, Plasma Sources Sci. Technol. 15, 37 (2006).
http://dx.doi.org/10.1088/0963-0252/15/1/006
3.
3.S. Morita, M. Nagatsu, I. Ghanashev, N. Toyoda, and H. Sugai, Jpn. J. Appl. Phys. 37, L468 (1998).
http://dx.doi.org/10.1143/JJAP.37.L468
4.
4.H. Sugai, I. Ghanashev, and M. Nagatsu, Plasma Sources Sci. Technol. 7, 192 (1998).
http://dx.doi.org/10.1088/0963-0252/7/2/014
5.
5.I. Odrobina, J. Kudela, and M. Kando, Plasma Sources Sci. Technol. 7, 238 (1998).
http://dx.doi.org/10.1088/0963-0252/7/2/018
6.
6.F. Werner, D. Korzec, and J. Engemann, Plasma Sources Sci. Technol. 3, 473 (1994).
http://dx.doi.org/10.1088/0963-0252/3/4/004
7.
7.Z. Q. Chen, m. H. Liu, P. Q. Zhou, W. Chen, C. H. Lan, and X. W. Hu, Plasma Sci. Technol. 10, 655 (2008).
http://dx.doi.org/10.1088/1009-0630/10/6/01
8.
8.X. Xu, F. Liu, Q. H. Zhou, B. Liang, Y. Z. Liang, and R. Q. Liang, Appl. Phys. Lett. 92, 011501 (2008).
http://dx.doi.org/10.1063/1.2829591
9.
9.I. Ghanashev, M. Nagatsu, and H. Sugai, Jpn. J. Appl. Phys. 36, 337 (1997).
http://dx.doi.org/10.1143/JJAP.36.337
10.
10.Z. Chen, M. Liu, L. Tang, P. Hu, and X. Hu, J. Appl. Phys. 106, 013314 (2009).
http://dx.doi.org/10.1063/1.3168493
11.
11.Z. Chen, M. Liu, L. Hong, Q. Zhou, L. Cheng, and X. Hu, Phys. Plasmas 18, 013505 (2011).
http://dx.doi.org/10.1063/1.3544934
12.
12.Z. Chen, Q. Ye, G. Xia, L. Hong, Y. Hu, X. Zheng, P. Li, Q. Zhou, X. Hu, and M. Liu, Phys. Plasmas 20, 033502 (2013).
http://dx.doi.org/10.1063/1.4794736
13.
13.H. Kousaka, J. Q. Xu, and N. Umehara, Jpn. J. Appl. Phys. 44, L1052 (2005).
http://dx.doi.org/10.1143/JJAP.44.L1052
14.
14.H. Kousaka, H. Iida, and N. Umehara, J. Vac. Soc. Jpn. 49, 183 (2006) (in japanese).
http://dx.doi.org/10.3131/jvsj.49.183
15.
15.H. Kousaka and N. Umehara, Vacuum 80, 806 (2006).
http://dx.doi.org/10.1016/j.vacuum.2005.11.015
16.
16.H. Kousaka, J. Q. Xu, and N. Umehara, Vacuum 80, 1154 (2006).
http://dx.doi.org/10.1016/j.vacuum.2006.01.048
17.
17.H. Kousaka and N. Umehara, Trans. Materials Research Soc. Jpn 31, 487 (2006).
18.
18.L. J. Zhu, Z. Q. Chen, Z. X. Yin, G. D. Wang, G. Q. Xia, Y. L. Hu, X. L. Zheng, M. R. Zhou, M. Chen, and M. H. Liu, Chin. Phys. Lett. 31, 035203 (2014).
http://dx.doi.org/10.1088/0256-307X/31/3/035203
19.
19.X. Deng, Y. Takaoka, H. Kousaka, and N. Umehara, Surf. Coat. Technol. 238, 80 (2014).
http://dx.doi.org/10.1016/j.surfcoat.2013.10.047
20.
20.X. Deng, H. Kousaka, T. Tokorayama, and N. Umehara, Tribology Online 8, 257 (2013).
http://dx.doi.org/10.2474/trol.8.257
21.
21.H. Kousaka, Y. Takaoka, and N. Umehara, Procedia Engineering 68, 544549 (2013).
http://dx.doi.org/10.1016/j.proeng.2013.12.219
22.
22.H. Kousaka, T. Okamoto, and N. Umehara, IEEE Transactions on Plasma Science 41, 1830 (2013).
http://dx.doi.org/10.1109/TPS.2013.2262392
23.
23.Y. Takaoka, H. Kousaka, and N. Umehara, Extended Abstract of 13th Plasma Surface Engineering (2012) OR1807 (4pages).
24.
24.H. Kousaka, K. Mori, N. Umehara, N. Tamura, and T. Shindo, Surf. Coat. Technol. 229, 65 (2013).
http://dx.doi.org/10.1016/j.surfcoat.2012.04.095
25.
25.R. Matsui, K. Mori, H. Kousaka, and N. Umehara, Diamond and Related Materials 31, 72 (2013).
http://dx.doi.org/10.1016/j.diamond.2012.11.003
26.
26.R. Matsui, H. Kousaka, and N. Umehara, Jpn. J. Appl. Phys. 52, 11NA01 (2013).
http://dx.doi.org/10.7567/JJAP.52.11NA01
27.
27.M. A. Lieberman and A. J. Litchenberg, Principles of Plasma Discharges and Materials Processing (Wiley, New York, 1994).
28.
28.I. P. Ganachev and K. Shimatani, Shibaura Mechatronics Technical Journal 2002-7, 23 (2002).
29.
29.T. Ibehej and R. Hrach, in WDS’13 Proceedings of Contrbuted Papers, Part II (2013) pp. 54-59.
http://aip.metastore.ingenta.com/content/aip/journal/adva/5/1/10.1063/1.4905713
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/content/aip/journal/adva/5/1/10.1063/1.4905713
2015-01-07
2016-09-25

Abstract

In recent decades, different types of plasma sources have been used for various types of plasma processing, such as, etching and thin film deposition. The critical parameter for effective plasma processing is high plasma density. One type of high density plasma source is Microwave sheath-Voltage combination Plasma (MVP). In the present investigation, a better design of MVP source is reported, in which over-dense plasma is generated for low input microwave powers. The results indicate that the length of plasma column increases significantly with increase in input microwave power.

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