No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2
3.G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, S. T. Pantelides, L. C. Feldman, O. W. Holland, M. K. Das, and J. W. Palmour, IEEE Electron Device Lett. 22, 176 (2001).
12.H. Yoshioka, J. Senzaki, A. Shimozato, Y. Tanaka, and H. Okumura, Appl. Phys. Lett. 104, 083516 (2014); an erratum was submitted. The error is excluded from the present paper.
14.D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. (Wiley, Hoboken, N.J., 2006).
15.Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices, 2nd ed. (Cambridge University Press, Cambridge, 2009).
17.J.-P. Colinge, L. Floyd, A. J. Quinn, G. Redmond, J. C. Alderman, W. Xiong, C. R. Cleavelin, T. Schulz, K. Schruefer, G. Knoblinger, and P. Patruno, IEEE Electron Device Lett. 27, 172 (2006).
23.N. T. Son, C. Persson, U. Lindefelt, W. M. Chen, B. K. Meyer, D. M. Hofmann, and E. Janzén, in Silicon Carbide Recent Major Advances, edited by W.J. Choyke, H. Matsunami, and G. Pensl (Springer, Berlin, 2004), p. 437.
Article metrics loading...
We investigated the effects of the interface state density (D
IT) at the interfaces between SiO2 and the Si-, C-, and a-faces of 4H-SiC in n-channel metal-oxide-semiconductor field-effect transistors that were subjected to dry/nitridation and pyrogenic/hydrotreatment processes. The interface state density over a very shallow range from the conduction band edge (0.00 eV < E
C − E
T) was evaluated on the basis of the subthreshold slope deterioration at low temperatures (11 K < T). The interface state density continued to increase toward E
C, and D
IT at E
C was significantly higher than the value at the conventionally evaluated energies (E
C − E
T = 0.1–0.3 eV). The peak field-effect mobility at 300 K was clearly inversely proportional to D
IT at 0.00 eV, regardless of the crystal faces and the oxidation/annealing processes.
Full text loading...
Most read this month