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Vacuum ultraviolet photochemical selective area atomic layer deposition of Al2
6.A. J. M. Mackus, N. F. W. Thissen, J. J. L. Mulders, P. H. F. Trompenaars, M. A. Verheijen, A. A. Bol, and W. M. M. Kessels, J. Phys. Chem. C 117, 10788 (2013).
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We report the photochemical
atomic layer deposition of Al
thin films and the use of this process to achieve area-selective film deposition. A shuttered vacuum ultraviolet (VUV) light source is used to excite molecular oxygen and trimethyl aluminum to deposit
films at 60°C. In-situ QCM and post-deposition ellipsometric measurements both show that the deposition rate is saturative as a function of irradiation time. Selective area deposition was achieved by projecting the VUV light through a metalized magnesium fluoride photolithographic mask and the selectivity of deposition on the illuminated and masked regions of the substrate is a logarithmic function of the UV exposure time. The Al
films exhibit dielectric constants of 8 – 10 at 1 MHz after forming gas annealing, similar to films
deposited by conventional thermal ALD.
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