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1.
1.K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) 432, 488 (2004).
http://dx.doi.org/10.1038/nature03090
2.
2.K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hoson, Science 300, 1269 (2003).
http://dx.doi.org/10.1126/science.1083212
3.
3.E. Fortunate, P. Barquinha, and R. Martins, Adv. Mater. 24, 2945 (2012).
http://dx.doi.org/10.1002/adma.201103228
4.
4.J. W. Hennek, J. Smith, A. Yan, M.-G. Kim, W. Zhao, V. P. Dravid, A. Facchetti, and T. J. Marks, J. Am. Chem. Soc. 29, 10729 (2013).
http://dx.doi.org/10.1021/ja403586x
5.
5.K. Hoshino and J. F. Wager, IEE Electr. Dev. Lett. 31, 818 (2010).
http://dx.doi.org/10.1109/LED.2010.2049980
6.
6.C.-O. Lin, B.-Y. Tsui, M.-J. Yang, R.-H. Huang, and C. H. Chien, IEE Electr. Dev. Lett. 27, 360 (2006).
http://dx.doi.org/10.1109/LED.2006.872832
7.
7.P. C. Lansaker, P. Petersson, G. A. Niklasson, and C. G. Granqvist, Sol. Energ. Mat. Sol. C. 17, 462 (2013).
http://dx.doi.org/10.1016/j.solmat.2013.06.051
8.
8.S. Aikawa, P. Darmawan, K. Yanagisawa, T. Nabatame, Y. Abe, and K. Tsukagoshi, Appl. Phys. Lett. 102, 102101 (2013).
http://dx.doi.org/10.1063/1.4794903
9.
9.T. Kizu, S. Aikawa, N. Mitoma, M. Shimizu, X. Gao, M.-F. Lin, T. Nabatame, and K. Tsukagoshi, Appl. Phys. Lett. 104, 152103 (2014).
http://dx.doi.org/10.1063/1.4871511
10.
10.S. Aikawa, T. Nabatame, and K. Tsukagoshi, Appl. Phys. Lett. 103, 172105 (2013).
http://dx.doi.org/10.1063/1.4822175
11.
11.N. Mitoma, S. Aikawa, X. Gao, T. Kizu, M. Shimizu, M.-F. Lin, T. Nabatame, and K. Tsukagoshi, Appl. Phys. Lett. 104, 102103 (2014).
http://dx.doi.org/10.1063/1.4868303
12.
12.P. K. Nayak, M. N. Hedhili, D. Cha, and H. N. Alshareef, Appl. Phys. Lett. 103, 033518 (2013).
http://dx.doi.org/10.1063/1.4816060
13.
13.Dhananjay and C.-W. Chu, Appl. Phys. Lett. 91, 132111 (2007).
http://dx.doi.org/10.1063/1.2789788
14.
14.M.-C. Chen, T.-C. Chang, S.-Y. Huang, K.-C. Chang, H.-W. Li, S.-C. Chen, J. Lu, and Y. Shi, Appl Phys. Lett. 94, 162111 (2009).
http://dx.doi.org/10.1063/1.3124658
15.
15.W.-S. Kim, Y. K. Moon, K.-T. Kim, S.-Y. Shin, and J.-W. Park, Thin Solid Films 520, 2220 (2012).
http://dx.doi.org/10.1016/j.tsf.2011.08.028
16.
16.S. Park, S. Park, S.-E. Ahn, I. Song, W. Chae, M. Han, J. Lee, and S. Jeon, J. Vac. Sci. Technol., B 31, 050605 (2013).
http://dx.doi.org/10.1116/1.4818279
17.
17.K. Song, C. Y. Koo, T. Jun, D. Lee, Y. Jeong, and J. Moon, J. Cryst. Growth 326, 23 (2011).
http://dx.doi.org/10.1016/j.jcrysgro.2011.01.044
18.
18.S. Tomai, M. Nishimura, M. Itose, M. Matsuura, M. Kasami, S. Matsuzaki, H. Kawashima, F. Utsuno, and K. Yano, Jpn. J. Appl. Phys., Part 1 51, 03CB01 (2012).
http://dx.doi.org/10.7567/JJAP.51.03CB01
19.
19.M.-G. Kim, H. S. Kim, Y.-G. Ha, J. He, M. G. Kanatzidis, A. Facchetti, and T. J. Marks, J. Am. Chem. Soc. 30, 132 (2010).
20.
20.C.-J. Kim, S. Kim, J.-H. Lee, J.-S. Park, S. Kim, J. Park, E. Lee, J. Lee, Y. Park, J. H. Kim, S. T. Shin, and U. I. Chung, Appl. Phys. Lett. 95, 252103 (2009).
http://dx.doi.org/10.1063/1.3275801
21.
21.E. Chong, K. C. Jo, and S. Y. Lee, Appl. Phys. Lett. 96, 152102 (2010).
http://dx.doi.org/10.1063/1.3387819
22.
22.K. Ghaffarzadeh, A. Nathan, J. Robertson, S. Kim, S. Jeon, C. Kim, U.-In. Chung, and J.-H. Lee, Appl. Phys. Lett. 97, 113504 (2010).
http://dx.doi.org/10.1063/1.3480547
23.
23.E. Chong, S. H. Kim, and S. Y. Lee, Appl. Phys. Lett. 97, 102102 (2010).
http://dx.doi.org/10.1063/1.3479925
24.
24.J.-S. Park, K. S. Kim, Y. G. Park, Y. G. Mo, H. D. Kim, and J. K. Jeong, Adv. Mater. 21, 329 (2009).
http://dx.doi.org/10.1002/adma.200802246
25.
25.S. Lee and D. C. Paine, Appl. Phys. Lett. 98, 262108 (2010).
http://dx.doi.org/10.1063/1.3605589
26.
26.Y. Ueoka, Y. Ishikawa, N. Maejima, F. Matsui, H. Matsui, H. Yamazaki, S. Urakawa, M. Horita, H. Daimon, and Y. Uraoka, J. Appl. Phys. 114, 163713 (2013).
http://dx.doi.org/10.1063/1.4828869
27.
27.S. Jahinuzzaman, A. Sultana, K. Sakariya, P. Servati, and A. Nathan, Appl. Phys. Lett. 87, 023520 (2005).
http://dx.doi.org/10.1063/1.1993766
28.
28.R. B. M. Cross and M. M. De Souza, Appl. Phys. Lett. 89, 263513 (2006).
http://dx.doi.org/10.1063/1.2425020
29.
29.A. Suresh and J. F. Muth, Appl. Phys. Lett. 92, 033502 (2008).
http://dx.doi.org/10.1063/1.2824758
30.
30.M. J. Powell, Appl. Phys. Lett. 43, 597 (1983).
http://dx.doi.org/10.1063/1.94399
31.
31.D.-H. Son, D.-H. Kim, J.-H. Kim, S. J. Sung, E.-A. Jung, and J.-K. Kang, Thin Solid Films 519, 6815 (2011).
http://dx.doi.org/10.1016/j.tsf.2011.04.079
32.
32.D. W. Kwon, J. H. Kim, J. S. Chang, S. W. Kim, W. Kim, J. C. Park, I. Song, C. J. Kim, U. I. Jung, and B.-G. Park, Appl. Phys. Lett. 98, 063502 (2011).
http://dx.doi.org/10.1063/1.3549180
33.
33.H.-S. Choi, S. Jeon, H. Kim, J. Shin, C. Kim, and U.-I. Chung, Appl. Phys. Lett. 99, 183502 (2011).
http://dx.doi.org/10.1063/1.3658460
34.
34.E. Chong, Y. S. Chun, S. H. Kim, and S. Y. Lee, Thin Solid Films 519, 6881 (2011).
http://dx.doi.org/10.1016/j.tsf.2011.04.044
35.
35.K.-H Liu, T.-C. Chang, K.-C. Chang, T.-M. Tsai, T.-Y. Hsieh, M.-C. Chen, B.-L. Yeh, and W.-C. Chou, Appl. Phys. Lett. 104, 103501 (2014).
http://dx.doi.org/10.1063/1.4863682
36.
36.A. Takagi, K. Nomura, H. Oht, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Thin Solid Films 486, 38 (2005).
http://dx.doi.org/10.1016/j.tsf.2004.11.223
37.
37.A. Suresh, P. Wellenius, A. Dhawan, and J. Muth, Appl. Phys. Lett. 90, 123512 (2007).
http://dx.doi.org/10.1063/1.2716355
38.
38.M. Furuta, T. Kawaharamura, D. Wang, T. Yoda, and T. Hirao, IEE Electron Device Lett. 33, 851 (2012).
http://dx.doi.org/10.1109/LED.2012.2192902
39.
39.T. Kawaharamura, T. Uchida, M. Sanada, and M. Furuta, AIP advances 3, 032135 (2013).
http://dx.doi.org/10.1063/1.4798303
40.
40.H. Yabuta, M. Sano, K. Abe, T. Den, T. Aiba, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, Appl. Phys. Lett. 89, 112123 (2006).
http://dx.doi.org/10.1063/1.2353811
41.
41.J. K. Jeong, J. H. Jeong, H. W. Yang, J.-S. Park, Y.-G. Mo, and H. D. Kim, Appl. Phys. Lett. 91, 113505 (2007).
http://dx.doi.org/10.1063/1.2783961
42.
42.See supplementary material at http://dx.doi.org/10.1063/1.4905903 for additional results and discussion.[Supplementary Material]
43.
43.B. Kim, E. Chong, D. H. Kim, Y. W. Jeon, D. H. Kim, and S. Y. Lee, Appl. Phys. Lett. 99, 062108 (2011).
http://dx.doi.org/10.1063/1.3615304
44.
44.M. Kimura, T. Nakanishi, K. Nomura, T. Kamiya, and H. Hosono, Appl. Phys. Lett. 92, 133512 (2008).
http://dx.doi.org/10.1063/1.2904704
45.
45.N. Yasuda, H. Ota, T. Horikawa, T. Nabatame, H. Satake, A. Toriumi, Y. Tamura, T. Sasaki, and F. Ootsuka, Extend Abstracts of the International Conference on Solid Devices and Materials (SSDM’ 2005) (2005), p. 250.
46.
46.J. H. Jeong, H. W. Yang, J.-S. Park, J. K. Jeong, Y.-G. Mo, H. D. Kim, J. Song, and C. S. Hwang, Electrochem. Solid-State Lett. 11, H157 (2008).
http://dx.doi.org/10.1149/1.2903209
47.
47.M. Yasaka, The Rigaku J. 26, 1 (2010).
48.
48.W. O.- Yang, N. Mitoma, T. Kizu, X. Gao, M.-F. Lin, T. Nabatame, and K. Tsukagoshi, Appl. Phys. Lett. 105, 163503 (2014).
http://dx.doi.org/10.1063/1.4898815
49.
49.J. Raja, K. Jang, H. H. Nguyen, T. T. Trinh, W. Choi, and J. Yi, Curr. Appl. Phys. 13, 246 (2013).
http://dx.doi.org/10.1016/j.cap.2012.07.016
50.
50.E. Chong, Y. S. Chun, and S. Y. Lee, Appl. Phys. Lett. 97, 102102 (2011).
http://dx.doi.org/10.1063/1.3479925
51.
51.S.-H. Choi and M.-K. Han, Appl. Phys. Lett. 100, 043503 (2012).
http://dx.doi.org/10.1063/1.3679109
52.
52.K. Ghaffarzadeh, A. Nathan, J. Robertson, S. Kim, S. Jeon, C. Kim, U.-I. Chung, and J.-H. Lee, Appl. Phys. Lett. 97, 113504 (2012).
http://dx.doi.org/10.1063/1.3480547
53.
53.C.-Y. Jeong, D. Lee, S.-H. Song, J. I. Kim, J.-H. Lee, and H.-I. Kwon, Semicond. Sci. Technol. 29, 045023 (2014).
http://dx.doi.org/10.1088/0268-1242/29/4/045023
54.
54.J.-M. Lee, I.-T. Cho, J.-H. Lee, and H.-I. Kwon, Appl. Phys. Lett. 93, 093504 (2008).
http://dx.doi.org/10.1063/1.2977865
55.
55.M. E. Lopes, H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, and I. Ferreira, Appl. Phys. Lett. 95, 063502 (2009).
http://dx.doi.org/10.1063/1.3187532
56.
56.T.-C. Chen, T.-C. Chang, C.-T. Tsai, T.-Y. Hsieh, S.-C. Chen, C.-S. Lin, M.-C. Hung, C.-H. Tu, J.-J. Chang, and P.-L. Chen, Appl. Phys. Lett. 97, 112104 (2010).
http://dx.doi.org/10.1063/1.3481676
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/content/aip/journal/adva/5/1/10.1063/1.4905903
2015-01-09
2016-09-29

Abstract

The stable operation of transistors under a positive bias stress (PBS) is achieved using Hf incorporated into InO-based thin films processed at relatively low temperatures (150 to 250 °C). The mobilities of the Hf-InO thin-film transistors (TFTs) are higher than 8 cm2/Vs. The TFTs not only have negligible degradation in the mobility and a small shift in the threshold voltage under PBS for 60 h, but they are also thermally stable at 85 °C in air, without the need for a passivation layer. The Hf-InO TFT can be stable even annealed at 150 °C for positive bias temperature stability (PBTS). A higher stability is achieved by annealing the TFTs at 250 °C, originating from a reduction in the trap density at the Hf-InO/gate insulator interface. The knowledge obtained here will aid in the realization of stable TFTs processed at low temperatures.

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