No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Modulation of hole-injection in GaInN-light emitting triodes and its effect on carrier recombination behavior
11.J. Xu, M. F. Schubert, A. N. Noemaun, D. Zhu, J. K. Kim, E. F. Schubert, M. H. Kim, H. J. Chung, S. Yoon, C. Sone, and Y. Park, Appl. Phys. Lett. 94, 011113 (2009).
14.J. H. Park, G. Lin, D. Y. Kim, J. W. Lee, J. Cho, J. Kim, J. Lee, Y. Kim, Y. Park, E. F. Schubert, and J. K. Kim, Opt. Exp. 23, 15398 (2015).
15.C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, Appl. Phys. Lett. 97, 261103 (2010).
16.J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, Appl. Phys. Lett. 103, 061104 (2013).
18.F. Bernardini, in Nitride Semiconductor Devices: Principles and Simulation, edited byJ. Piprek (Wiley-VCH, Weinheim, 2007), pp. 49–67.
Article metrics loading...
The effects of the hole injection modulated by using a three-terminal GaInN-based light emitter, light-emitting triode (LET), on carrier recombination behavior and efficiency droop are investigated. It was found that the lateral electric field created by applying voltage bias between the two anodes effectively reduces efficiency droop as well as dynamic conductance of LETs. Detailed analyses of LETs under various operation conditions by APSYS simulations reveal that the asymmetry in carrier transport between electrons and holes is alleviated by promoted injection of hot holes over the potential barrier, increasing the hole concentration as well as the radiative recombination rate in the multiple quantum well active region.
Full text loading...
Most read this month