Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
1.K. Kuhn, C. Kenyon, A. Kornfeld, M. Liu, A. Maheshwari, W. K. Shih, S. Sivakumar, G. Taylor, P. VanDerVoorn, and K. Zawadzki, Intel Tech. J. 12, 93 (2008).
2.T. Tsuno, K. Anzai, M. Matsumura, S. Minami, A. Honjo, H. Koike, Y. Hiura, A. Takeo, W. Fu, Y. Fukuzaki, M. Kanno, H. Ansai, and N. Nagashima, VLSI Symp. 204 (2007).
3.M. Miyamoto, H. Ohta, Y. Kumagai, Y. Sonobe, K. Ishibashi, and Y. Tainaka, IEEE Trans. Elec. Dev. 51, 440 (2004).
4.Y. M. Sheu, S. J. Yang, C. C. Wang, C. S. Chang, L. P. Huang, T. Y. Huang, M. J. Chen, and C.H. Diaz, IEEE Trans. Elec. Dev. 52, 30 (2005).
5.H. Fukutome, Y. Momiyama, T. Kubo, Y. Tagawa, T. Aoyama, and H. Arimoto, IEEE Trans. Elec. Dev. 53, 2755 (2006).
6.P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, D. C. Jacobson, C. S. Rafferty, G. H. Gilmer, M. Jaraíz, J. M. Poate, H. S. Luftman, and T. E. Haynes, J. Appl. Phys. 81, 6031 (1997).
7.D. Lim, C. Rafferty, and F. Klemens, Appl. Phys. Lett. 67, 2302 (1995).
8.N. E. B. Cowern, G. F. A. van de Walle, P. C. Zalm, and D. W. E. Vandenhoudt, Appl. Phys. Lett. 65, 2981 (1994).
9.B. Colombeau, N. E. B. Cowern, F. Cristiano, P. Calvo, N. Cherkashin, Y. Lamrani, and A. Claverie, Appl. Phys. Lett. 83, 1953 (2003).
10.H. Cerva, Defect Diffus. Forum 148, 103 (1997).
11.P. M. Fahey, S. R. Mader, S. R. Stiffler, R. L. Mohler, J. D. Mis, and J. A. Slinkman, IBM J. Res. Dev. 36, 158 (1992).
12.N. Burbure, N. Rudawski, and K. Jones, Electrochem. Solid State 10, H184 (2007).
13.W.Y. Woon and C.L. Chen, Appl. Phys. Lett. 97, 121907 (2010).
14.N. E. B. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraíz, Phys. Rev. Lett. 82, 4460 (1999).
15.N. E. B. Cowern, H. G. A. Huizing, P. A. Stolk, C. C. G. Visser, R. C. M. de Kruif, K. Kyllesbech, V. Privitera, L. K. Nanver, and W. Crans, Nucl. Instr. and Meth. in Phys. Res. B 120, 1418 (1996).

Data & Media loading...


Article metrics loading...



We investigate the evolution of two dimensional transient enhanced diffusion (TED) of phosphorus in sub-micron scale patterned silicon template. Samples doped with low dose phosphorus with and without high dose silicon self-implantation, were annealed for various durations. Dopant diffusion is probed with plane-view scanning capacitance microscopy. The measurement revealed two phases of TED. Significant suppression in the second phase TED is observed for samples with high dose self-implantation. Transmission electron microscopy suggests the suppressed TED is related to the evolution of end of range defect formed around ion implantation sidewalls.


Full text loading...


Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd