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Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation
1.K. Kuhn, C. Kenyon, A. Kornfeld, M. Liu, A. Maheshwari, W. K. Shih, S. Sivakumar, G. Taylor, P. VanDerVoorn, and K. Zawadzki, Intel Tech. J. 12, 93 (2008).
2.T. Tsuno, K. Anzai, M. Matsumura, S. Minami, A. Honjo, H. Koike, Y. Hiura, A. Takeo, W. Fu, Y. Fukuzaki, M. Kanno, H. Ansai, and N. Nagashima, VLSI Symp. 204 (2007).
6.P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, D. C. Jacobson, C. S. Rafferty, G. H. Gilmer, M. Jaraíz, J. M. Poate, H. S. Luftman, and T. E. Haynes, J. Appl. Phys. 81, 6031 (1997).
14.N. E. B. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraíz, Phys. Rev. Lett. 82, 4460 (1999).
15.N. E. B. Cowern, H. G. A. Huizing, P. A. Stolk, C. C. G. Visser, R. C. M. de Kruif, K. Kyllesbech, V. Privitera, L. K. Nanver, and W. Crans, Nucl. Instr. and Meth. in Phys. Res. B 120, 14–18 (1996).
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We investigate the evolution of two dimensional transient enhanced diffusion (TED) of phosphorus in sub-micron scale patterned silicon template. Samples doped with low dose phosphorus with and without high dose silicon self-implantation, were annealed for various durations. Dopant
diffusion is probed with plane-view scanning capacitance microscopy. The measurement revealed two phases of TED. Significant suppression in the second phase TED is observed for samples with high dose self-implantation. Transmission electron microscopy suggests the suppressed TED is related to the evolution of end of range defect formed around ion implantation sidewalls.
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