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Highly efficient and controllable method to fabricate ultrafine metallic nanostructures
2.K. Qian, B. C. Sweeny, A. C. Johnston-Peck, W. X. Niu, J. O. Graham, J. S. DuChene, J. J. Qiu, Y. C. Wang, M. H. Engelhard, D. Su, E. A. Stach, and W. D. Wei, J. Am. Chem. Soc. 136, 9842 (2014).
4.W. Q. Zhu and K. B. Crozier, Nature Communications 5, 6228 (2014).
7.R. G. Hobbs, Y. Yang, A. Fallahi, P. D. Keathley, E. De Leo, F. X. Kartner, W. S. Graves, and K. K. Berggren, Acs Nano 8, 11474 (2014).
10.A. Loubat, L. M. Lacroix, A. Robert, M. Imperor-Clerc, R. Poteau, L. Maron, R. Arenal, B. Pansu, and G. Viau, J. Phys. Chem. C 119, 4422 (2015).
14.Vitor R. Manfrinato, Lihua Zhang, Dong Su, Huigao Duan, Richard G. Hobbs, Eric A. Stach, and Karl K. Berggren, Nano Lett. 13, 1555 (2013).
16.Ajuan Cui, Zhe Liu, Huanli Dong, Yujin Wang, Yonggang Zhen, Wuxia Li, Junjie Li, Changzhi Gu, and Wenping Hu, Adv. Mater. 27, 3002 (2015).
17.Chen Zhang, Da Wang, Zheng-Hao Liu, Yan Zhang, Ping Ma, Qing-Rong Feng, Yue Wang, and Zi-Zhao Gan, Aip Advances 5 (2015).
20.H. G. Duan, Donald Winston, Joel K. W. Yang, Bryan M. Cord, Vitor R. Manfrinato, and Karl K. Berggren, J. Vac. Sci. Technol. B 28, C6C58 (2010).
25.I. B. Baek, J. H. Yang, W. J. Cho, C. G. Ahn, K. Im, and S. Lee, 24.
26.L. Dreeskornfeld, A. P. Graham, J. Hartwich, J. Kretz, E. Landgraf, T. Lutz, W. Rosner, M. Specht, and L. Risch, Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 45, 5552 (2006).
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We report a highly efficient, controllable and scalable method to fabricate various ultrafine metallic nanostructures in this paper. The method starts with the negative poly-methyl-methacrylate (PMMA) resist
pattern with line-width superior to 20 nm, which is obtained from overexposing of the conventionally positive PMMA under a low energy electron beam. The pattern is further shrunk to sub-10 nm line-width through reactive ion etching. Using the patter as a mask, we can fabricate various ultrafine metallic nanostructures with the line-width even less than 10 nm. This ion tailored mask lithography (ITML) method enriches the top-down fabrication strategy and provides potential opportunity for studying quantum effects in a variety of materials.
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