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/content/aip/journal/adva/5/11/10.1063/1.4935872
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/content/aip/journal/adva/5/11/10.1063/1.4935872
2015-11-11
2016-09-26

Abstract

Amorphous Ge-rich Si Ge films with local Ge-clustering were deposited by dual-source jet-type inductively coupled plasma chemical-vapor deposition (jet-ICPCVD). The structural evolution of the deposited films annealed at various temperatures (Ta) is investigated. Experimental results indicate that the crystallization occurs to form Ge and Si clusters as Ta = 500 °C. With raising Ta up to 900 °C, Ge clusters percolate together and Si diffuses and redistributes to form a Ge/SiGe core/shell structure, and some Ge atoms partially diffuse to the surface as a result of segregation. The present work will be helpful in understanding the structural evolution process of a hybrid SiGe films and beneficial for further optimizing the microstructure and properties.

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