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/content/aip/journal/adva/5/11/10.1063/1.4936629
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http://aip.metastore.ingenta.com/content/aip/journal/adva/5/11/10.1063/1.4936629
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/content/aip/journal/adva/5/11/10.1063/1.4936629
2015-11-23
2016-12-08

Abstract

A Pd-Si amorphous phase was formed at a palladium/silicon oxide (Pd/SiO) interface at room temperature by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Solid-state amorphization was stimulated without the electron knock-on effects. The total dose required for the solid-state amorphization decreases with decreasing acceleration voltage. This is the first report on electron irradiation induced metallic amorphousformation caused by the electronic excitation at metal/silicon oxide interface.

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