No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition
5.H. Morkoc, Handbook of Nitride Semiconductors and Devices. Vol. 3: GaN-based Optical and Electronic Devices (Wiley, New York, 2008), p. 375.
8.R. H. Wang, G. W. Li, G. Karbasian, J. Guo, F. Faria, Z. Y. Hu, Y. Z. Yue, J. Verma, O. Laboutin, Y. Cao, W. Johnson, G. Sinder, P. Fay, D. Jena, and H. L. Xing, Appl. Phys. Express 6, 016503 (2013).
10.W. Lanford, V. Kumar, R. Schwindt, A. Kuliev, I. Adesida, A. M. Dabiran, A. M. Dabiran, A. M. Wowchak, P. P. Chow, and J.-W. Lee, Electron. Lett. 40, 771 (2004).
11.M. Neuburger, I. Daumiller, T. Zimmermann, M. Kunze, G. Koley, M. G. Spencer, A. Dadgar, A. Krtschil, A. Krost, and E. Kohn, Electron. Lett. 39, 1614 (2003).
12.Y. Zhang, X. Zhou, S. Xu, Z. Wang, Y. Zhao, J. Zhang, D. Chen, J. Zhang, and Y. Hao, Appl. Phys. Lett. 106, 152101 (2015).
13.S. Gökden, R. tülek, A. Teke, J. H. Leach, Q. Fan, J. Xie, Ü. Özgür, H. Morkoc, S. B. Lisesivdin, and E. Özbay, Semicond. Sci. Technol. 25, 045024 (2010).
14.H. Ikki, Y. Isobe, D. Iida, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano, A. Bandoh, and T. Udagawa, Phys. Status Solidi A 208, 1614 (2011).
Article metrics loading...
Pulsed metal organic chemical vapor deposition (P-MOCVD) is introduced into the growth of high quality InGaN channel heterostructures. The effects of InGaN channel growth temperature on the structural and transport properties of the heterostructures are investigated in detail. High resolution x-ray diffraction (HRXRD) and Photoluminescence (PL) spectra indicate that the quality of InGaN channel strongly depends on the growth temperature. Meanwhile, the atomic force microscopy (AFM) results show that the interface morphology between the InGaN channel and the barrier layer also relies on the growth temperature. Since the variation of material properties of InGaN channel has a significant influence on the electrical properties of InAlN/InGaN heterostructures, the optimal transport properties can be achieved by adjusting the growth temperature. A very high two dimension electron gas(2DEG) density of 1.92 × 1013 cm−2 and Hall electron mobility of 1025 cm2/(V⋅s) at room temperature are obtained at the optimal growth temperature around 740 °C. The excellent transport properties in our work indicate that the heterostructure with InGaN channel is a promising candidate for the microwave power devices, and the results in this paper will be instructive for further study of the InGaN channel heterostructures.
Full text loading...
Most read this month