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/content/aip/journal/adva/5/12/10.1063/1.4937132
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/content/aip/journal/adva/5/12/10.1063/1.4937132
2015-12-02
2016-09-27

Abstract

We have studied the GaNgrown on ZnO micro-rods by plasma-assisted molecular beam epitaxy. From the analyses of GaN microstructure grown on non-polar -plane ZnO surface () by scanning transmission electron microscope, we found that the ZnGaO compound was formed at the -plane hetero-interface, which was confirmed by polarization-dependent photoluminescence. We demonstrated that the -plane ZnO micro-rod surface can be used as an alternative substrate to grow high quality -plane GaN epi-layers.

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