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/content/aip/journal/adva/5/12/10.1063/1.4937412
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http://aip.metastore.ingenta.com/content/aip/journal/adva/5/12/10.1063/1.4937412
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/content/aip/journal/adva/5/12/10.1063/1.4937412
2015-12-04
2016-12-04

Abstract

InPBi epilayers with bismuth (Bi) concentration x= 1.0% were grown on InP by gas source molecular beam epitaxy (GS-MBE) at low temperature (LT). Bi incorporation decreased the intrinsic free electron concentration of low temperature grown InP indicated by hall analysis. It is concluded that deep level center was introduced by Bi. Influence of Si doping on the InPBi films Photoluminescence(PL) was investigated. -type doping in the InPBi epilayers was found to be effective at PL enhancement. Blue shift of InPBi PL emission wavelength was observed as the Si doping concentration increasing. Two independent peaks were fitted and their temperature dependence behavior was observed to be distinct obviously. Two individual radiative recombination processes were expected to be involved.

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