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1.K. O. a. H. OKAMOTO, “New Semiconductors Alloy GaAsBi Grown by Metal Organic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys 37 (1998) (Part 2, No. 11A).
2.B. Fluegel, S. F., A. Mascarenhas, S. Tixier, E. C. Young, and T. Tiedje, “Giant Spin-Orbit Bowing in GaAs1-xBix,” PHYSICAL REVIEW LETTERS 97, 067205 (2006).
3.Heather Jacobsen, B. P., Thomas F. Kuech, and Dane Morgan, “Ab initio study of the strain dependent thermodynamics of Bi doping in GaAs,” Physical Review B 86, 085207 (2012).
4.M. K. Rajpalke, W. M. L., M. Birkett, K. M. Yu, D. O. Scanlon, J. Buckeridge, T. S. Jones, M. J. Ashwin, and T. D. Veal, “Growth and properties of GaSbBi alloys,” Applied Physics Letters 103, 142106 (2013).
5.Ville Virkkala, V. H., Filip Tuomisto, and Martti J. Puska, “Modeling Bi-induced changes in the electronic structure of GaAs1-xBix alloys,” Physical Review B 88, 235201 (2013).
6.S. R. Jin and Sweeney, “InGaAsBi alloys on InP for efficient near- and mid- infrared light emitting devices,” Journal of Applied Physics 114, 213103 (2013).
7.J. P. Petropoulos, Y. Z., and J. M. O. Zide, “Optical and electrical characterization of InGaBiAs for use as a mid-infrared optoelectronic material,” Appl. Phys. Lett. 99, 031110 (2011).
8.P. Ludewig, N. K., N. Hossain, S. Reinhard, L. Nattermann, I. P. Marko, S. R. Jin, K. Hild, S. Chatterjee, W. Stolz, S. J. Sweeney, and K. Volz1, “Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser,” Applied Physics Letters 102, 242115 (2013).
9.N. Hossain, I. P. M., S. R. Jin, 1 K. Hild, S. J. Sweeney, R. B. Lewis, D. A. Beaton, and T. Tiedje, “Recombination mechanisms and band alignment of GaAs1-xBix/GaAs light emitting diodes,” Applied Physics Letters 100, 051105 (2012).
10.K Streubel, N Linder, R Wirth, and A Jaeger, “High brightness AlGaInP light-emitting diodes,” IEEE J Sel Topics in Quan Electron 8, 321332 (2002).
11.M Yamamoto, N Yamamoto, and J Nakano, “MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low-threshold 1.3-μm lasers,” IEEE J Quan Electron 30, 554561 (1994).
12.M. A. Berding, A. Sher, A.B. Chen, and W. E Miller, “Structural properties of bismuth bearing semiconductor alloys,” Journal of Applied Physics 63, 107 (1988).
13.P.J. Dean, A. M. W., E.W. Williams, and M.G. Astles, “The isoelectronic trap bismuth in indium phosphide,” Soild State Communications 9, 18 (1971).
14.S. Riihle, R. Meek, N. Stath, J. U. Fischbach, I. Strottner, K. W. Benz, and M. Pilkuhn, “Isoelectronic impurity states in direct-gap III-V compounds: The case of InP:Bi,” Physical Review B 18, 12 (1978).
15.Yi Gu, Kai Wang, Haifei Zhou, Yaoyao Li, Chunfang Cao, Liyao Zhang, Yonggang Zhang, Qian Gong, and Shumin Wang, “Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy,” Nanoscale Research Letters 9, 24 (2014).
16.K Wang, P Wang, W W Pan, X Y Wu, L Yue, Q Gong, and S M Wang, “Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy,” Semicond. Sci. Technol. 30, 094006 (2015).
17.B. W. Liang, P. Z. L., D. W. Shih, and C. W. Tu, “Electrical properties of InP grown by gas-source molecular beam epitaxy at Low temperature,” Appl. Phys. Lett. 60, 2014 (1992).
18.H. P. D. Schenk, S. I. B., A. Berezin, A. Schön, E. Cheifetz, S. Khatsevich, and D. H. Rich, “Band gap narrowing and radiative efficiency of silicon doped GaN,” Journal of Applied Physics 103, 103502 (2008).
19.K. Wang, Y. Gu, H. F. Zhou, L. Y. Zhang, C. Z. Kang, M. J. Wu, W. W. Pan, P. F. Lu, Q. Gong, and S. M. Wang, “InPBi single crystals grown by molecular beam epitaxy,” Scientific Reports 4, 5447 (2014).
20.H. Q. Zheng, K. R., S. F. Yoon, and G. I. Ng, “Electrical and optical properties of Si-doped InP grown by solid sourcemolecular beam epitaxy using a valved phosphorus cracker cell,” Journal of Applied Physics 87, 11 (2000).
21.Nam-Young Lee, Kyu-Jang Lee, Chul Lee, Jae-Eun Kim, Hae Young Peak, Dong–Hwa Kwak, Hee-chul Lee, and H. Lim, “Determination of conduction band tail and Fermi energy of heavily Si-doped GaAs by room-temperature photoluminescence,” Journal of Applied Physics 78, 5 (1995).

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InPBi epilayers with bismuth (Bi) concentration x= 1.0% were grown on InP by gas source molecular beam epitaxy (GS-MBE) at low temperature (LT). Bi incorporation decreased the intrinsic free electron concentration of low temperature grown InP indicated by hall analysis. It is concluded that deep level center was introduced by Bi. Influence of Si doping on the InPBi films Photoluminescence(PL) was investigated. -type doping in the InPBi epilayers was found to be effective at PL enhancement. Blue shift of InPBi PL emission wavelength was observed as the Si doping concentration increasing. Two independent peaks were fitted and their temperature dependence behavior was observed to be distinct obviously. Two individual radiative recombination processes were expected to be involved.


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