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/content/aip/journal/adva/5/12/10.1063/1.4938126
2015-12-14
2016-12-09

Abstract

We investigated the effect of thermal oxidation on crystalline faults in 4H-SiC epilayers using photoluminescenceimaging. We found that a comb-shaped dislocation array was deformed by thermal oxidation. We also found that line-shaped faults perpendicular to the off-cut direction were formed during oxidation and were stretched and increased with the oxidation time. Since these line-shaped faults were peculiar to the oxidation and stretched/increased with the oxide growth, they were identified as oxidation-induced stacking faults as seen in Si oxidation.

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