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Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers
26.Y. Hijikata, S. Yagi, H. Yaguchi, and S. Yoshida, in Physics and Technologies of Silicon Carbide Devices, edited by Y. Hijikata (InTech, 2013), Chap. 7, p. 181.
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We investigated the effect of thermal oxidation on crystalline faults in 4H-SiC epilayers using photoluminescenceimaging. We found that a comb-shaped dislocation array was deformed by thermal oxidation. We also found that line-shaped faults perpendicular to the off-cut direction were formed during oxidation and were stretched and increased with the oxidation time. Since these line-shaped faults were peculiar to the oxidation and stretched/increased with the oxide growth, they were identified as oxidation-induced stacking faults as seen in Si oxidation.
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