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Robust luminescence of the silicon-vacancy center in diamond at high temperatures
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15. Some percent of variation of the integrated signal was observed for movements along the sample of the order of a few micrometers. Consequently, since during the temperature ramp a slight displacement due to the thermal expansion of the holder takes place, at each change of temperature great attention was devoted to the maximization of the luminescent signal in the direction of the optical axis (z) and to the tracking of the position of the measurement point in the xy plane. Moreover, measurements were taken and averaged on a matrix of 5 × 5 points with a pitch of 2 μm, to make sure that the center of the original measurement point was included in the measurement area.
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We performed high-temperature luminescence studies of silicon-vacancy color centers obtained by ion implantation in single crystaldiamond. We observed reduction of the integrated fluorescence upon increasing temperature, ascribable to a transition channel with an activation energy of 180 meV that populates a shelving state. Nonetheless, the signal decreased only 50% and 75% with respect to room temperature at 500 K and 700 K, respectively. In addition, the color center is found highly photostable at temperatures exceeding 800 K. The luminescence of this color center is thus extremely robust even at large temperatures and it holds promise for novel diamond-based light-emitting devices.
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