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/content/aip/journal/adva/5/12/10.1063/1.4938256
1.
1.M. Willander, M. Friesel, Q.-U. Wahab, and B. Straumal, J. Mater. Science: Materials in Electronics 17, 1 (2006).
http://dx.doi.org/10.1007/s10854-005-5137-4
2.
2.A. Lohrmann, S. Pezzagna, I. Dobrinets, P. Spinicelli, V. Jacques, J.-F. Roch, J. Meijer, and A. M. Zaitsev, Appl. Phys. Lett. 99, 251106 (2011).
http://dx.doi.org/10.1063/1.3670332
3.
3.N. Mizuochi, T. Makino, H. Kato, D. Takeuchi, M. Ogura, H. Okushi, M. Nothaft, P. Neumann, A. Gali, F. Jelezko, J. Wrachtrup, and S. Yamasaki, Nat. Photon. 6, 299 (2012).
http://dx.doi.org/10.1038/nphoton.2012.75
4.
4.A. M. Berhane, S. Choi, H. Kato, T. Makino, N. Mizuochi, S. Yamasaki, and I. Aharonovich, Appl. Phys. Lett. 106, 171102 (2015).
http://dx.doi.org/10.1063/1.4919388
5.
5.A. Lohrmann, N. Iwamoto, Z. Bodrog, S. Castelletto, T. Ohshima, T. Karle, A. Gali, S. Prawer, J. McCallum, and B. Johnson, Nat. Commun. 6, 7783 (2015).
http://dx.doi.org/10.1038/ncomms8783
6.
6.M. Gabrysch, S. Majdi, A. Hallén, M. Linnarsson, A. Schöner, D. Twitchen, and J. Isberg, Phys. Stat. Sol. (a) 205, 2190 (2008).
http://dx.doi.org/10.1002/pssa.200879711
7.
7.I. Stenger, M.-A. Pinault-Thaury, T. Kociniewski, A. Lusson, E. Chikoidze, F. Jomard, Y. Dumont, J. Chevallier, and J. Barjon, J. Appl. Phys. 114, 073711 (2013).
http://dx.doi.org/10.1063/1.4818946
8.
8.S. Pezzagna, D. Rogalla, D. Wildanger, J. Meijer, and A. Zaitsev, New J. Phys. 13, 035024 (2011).
http://dx.doi.org/10.1088/1367-2630/13/3/035024
9.
9.T. Feng and B. D. Schwartz, J. Appl. Phys. 73, 1415 (1993).
http://dx.doi.org/10.1063/1.353239
10.
10.A. A. Gorokhovsky, A. V. Turukhin, R. R. Alfano, and W. Phillips, Appl. Phys. Lett. 66, 43 (1995).
http://dx.doi.org/10.1063/1.114176
11.
11.E. Neu, C. Hepp, M. Hauschild, S. Gsell, M. Fischer, H. Sternschulte, D. Steinmüller-Nethl, M. Schreck, and C. Becher, New J. Phys. 15, 043005 (2013).
http://dx.doi.org/10.1088/1367-2630/15/4/043005
12.
12.E. Neu, M. Agio, and C. Becher, Opt. Express 20, 19956 (2012).
http://dx.doi.org/10.1364/OE.20.019956
13.
13.L. Palla, C. Czelusniak, F. Taccetti, L. Carraresi, L. Castelli, M. Fedi, L. Giuntini, P. Maurenzig, L. Sottili, and N. Taccetti, European Phys. J. Plus 130, 39 (2015).
http://dx.doi.org/10.1140/epjp/i2015-15039-y
14.
14.J. Ziegler, J. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids, Stopping and ranges of ions in matter (Pergamon, 1985).
15.
15. Some percent of variation of the integrated signal was observed for movements along the sample of the order of a few micrometers. Consequently, since during the temperature ramp a slight displacement due to the thermal expansion of the holder takes place, at each change of temperature great attention was devoted to the maximization of the luminescent signal in the direction of the optical axis (z) and to the tracking of the position of the measurement point in the xy plane. Moreover, measurements were taken and averaged on a matrix of 5 × 5 points with a pitch of 2 μm, to make sure that the center of the original measurement point was included in the measurement area.
16.
16.M. S. Liu, L. A. Bursill, S. Prawer, and R. Beserman, Phys. Rev. B 61, 3391 (2000).
http://dx.doi.org/10.1103/PhysRevB.61.3391
17.
17.A. Gali and J. R. Maze, Phys. Rev. B 88, 235205 (2013).
http://dx.doi.org/10.1103/PhysRevB.88.235205
18.
18.See supplementary material at http://dx.doi.org/10.1063/1.4938256 for details on the models used to describe the photophysics of the SiV color center.[Supplementary Material]
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/content/aip/journal/adva/5/12/10.1063/1.4938256
2015-12-15
2016-09-29

Abstract

We performed high-temperature luminescence studies of silicon-vacancy color centers obtained by ion implantation in single crystaldiamond. We observed reduction of the integrated fluorescence upon increasing temperature, ascribable to a transition channel with an activation energy of 180 meV that populates a shelving state. Nonetheless, the signal decreased only 50% and 75% with respect to room temperature at 500 K and 700 K, respectively. In addition, the color center is found highly photostable at temperatures exceeding 800 K. The luminescence of this color center is thus extremely robust even at large temperatures and it holds promise for novel diamond-based light-emitting devices.

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