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-type conductivity in annealed strontium titanate
8.Vernuil–grown, MTI batch G150101, manufactured in Japan.
16.M.D. McCluskey and E.E. Haller, Dopants and Defects in Semiconductors (CRC Press, Boca Raton, FL, 2012), p. 238.
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Hall-effect measurements indicate p-type conductivity in bulk, single-crystalstrontiumtitanate (SrTiO3, or STO) samples that were annealed at 1200°C. Room-temperature mobilities above 100 cm2/V s were measured, an order of magnitude higher than those for electrons (5-10 cm2/V s). Average hole densities were in the 109-1010 cm−3 range, consistent with a deep acceptor.
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