Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/adva/5/12/10.1063/1.4938521
1.
1.M. Dawber, K.M. Rabe, and J.F. Scott, Rev. Mod. Phys. 77, 1083 (2005).
http://dx.doi.org/10.1103/RevModPhys.77.1083
2.
2.A.P. Ramirez, J. Phys.: Condens. Matter 9, 8171 (1997).
http://dx.doi.org/10.1088/0953-8984/9/39/005
3.
3.J.G. Bednorz and K.A. Müller, Z. Phys. B.: Condens. Matter 64, 189 (1986).
http://dx.doi.org/10.1007/BF01303701
4.
4.K. van Benthem, C. Elasser, and R. H. French, J. Appl. Phys. 90, 6156 (2001).
http://dx.doi.org/10.1063/1.1415766
5.
5.M.C. Tarun, F.A. Selim, and M.D. McCluskey, Phys. Rev. Lett. 111, 187403 (2013).
http://dx.doi.org/10.1103/PhysRevLett.111.187403
6.
6.V.M. Poole, J. Dashdorj, M.E. Zvanut, and M.D. McCluskey, MRS Proceedings 1792, DOI: 10.1557/opl.2015.531 (2015).
http://dx.doi.org/10.1557/opl.2015.531
7.
7.R. Meyer, R. Waser, J. Helmbold, and G. Borchardt, Phys. Rev. Lett. 90, 105901 (2003).
http://dx.doi.org/10.1103/PhysRevLett.90.105901
8.
8.Vernuil–grown, MTI batch G150101, manufactured in Japan.
9.
9.K.W. Blazey and H. Weibel, J. Phys. Chem. Solids 45, 917 (1984).
http://dx.doi.org/10.1016/0022-3697(84)90134-3
10.
10.M.D. McCluskey and M.C. Tarun, AIP Conference Proceedings 1583, 319 (2014).
http://dx.doi.org/10.1063/1.4865661
11.
11.I.D. Baikie, U. Petermann, A. Speakman, B. Lägel, K.M. Dirscherl, and P.J. Estrup, J. Appl. Phys. 88, 4371 (2000).
http://dx.doi.org/10.1063/1.1289486
12.
12.H.P.R. Frederikse and W.R. Hosler, Phys. Rev. 161, 822 (1967).
http://dx.doi.org/10.1103/PhysRev.161.822
13.
13.O.N. Tufte and P.W. Chapman, Phys. Rev. 155, 796 (1967).
http://dx.doi.org/10.1103/PhysRev.155.796
14.
14.B. Himmetoglu, A. Janotti, H. Peelaers, A. Alkauskas, and C.G. Van de Walle, Phys. Rev. B 90, 241204 (2014).
http://dx.doi.org/10.1103/PhysRevB.90.241204
15.
15.A. Verma, A.P. Kajdos, T.A. Cain, S. Stemmer, and D. Jena, Phys. Rev. Lett. 112, 216601 (2014).
http://dx.doi.org/10.1103/PhysRevLett.112.216601
16.
16.M.D. McCluskey and E.E. Haller, Dopants and Defects in Semiconductors (CRC Press, Boca Raton, FL, 2012), p. 238.
17.
17.J. Dashdorj, M.E. Zvanut, and L.J. Stanley, J. Appl. Phys. 107, 083513 (2010).
http://dx.doi.org/10.1063/1.3372760
18.
18.B.W. Faughnan, Phys. Rev. B 4, 3623 (1971).
http://dx.doi.org/10.1103/PhysRevB.4.3623
19.
19.R.L. Wild, E.M. Rockar, and J.C. Smith, Phys. Rev. B. 8, 3828 (1973).
http://dx.doi.org/10.1103/PhysRevB.8.3828
20.
20.N. Sata, K. Hiramoto, M. Ishigame, S. Hosoya, N. Niimura, and S. Shin, Phys. Rev. B 54, 15795 (1996).
http://dx.doi.org/10.1103/PhysRevB.54.15795
21.
21.T. Higuchi, T. Tsukamoto, N. Sata, M. Ishigame, Y. Tezuka, and S. Shin, Phys. Rev. B 57, 6978 (1998).
http://dx.doi.org/10.1103/PhysRevB.57.6978
22.
22.S. Dai, H. Lu, F. Chen, Z. Chen, Z. Y. Ren, and D.H.L. Ng, Appl. Phys. Lett. 80, 3545 (2002).
http://dx.doi.org/10.1063/1.1478148
23.
23.T. Fix, R. Bali, N. Stelmashenko, and M.G Bamire, Solid State Commun. 146, 248 (2008).
http://dx.doi.org/10.1016/j.ssc.2008.03.019
24.
24.A. Janotti, J.B. Varley, M. Choi, and C.G. Van de Walle, Phys. Rev. B 90, 085202 (2014).
http://dx.doi.org/10.1103/PhysRevB.90.085202
25.
25.F.J. Morin and J.R. Oliver, Phys. Rev. B 8, 5847 (1973).
http://dx.doi.org/10.1103/PhysRevB.8.5847
26.
26.T.C. Ensign and S.E. Stokowski, Phys. Rev. B 1, 2799 (1970).
http://dx.doi.org/10.1103/PhysRevB.1.2799
http://aip.metastore.ingenta.com/content/aip/journal/adva/5/12/10.1063/1.4938521
Loading
/content/aip/journal/adva/5/12/10.1063/1.4938521
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/adva/5/12/10.1063/1.4938521
2015-12-17
2016-12-05

Abstract

Hall-effect measurements indicate -type conductivity in bulk, single-crystalstrontiumtitanate (SrTiO, or STO) samples that were annealed at 1200°C. Room-temperature mobilities above 100 cm2/V s were measured, an order of magnitude higher than those for electrons (5-10 cm2/V s). Average hole densities were in the 109-1010 cm−3 range, consistent with a deep acceptor.

Loading

Full text loading...

/deliver/fulltext/aip/journal/adva/5/12/1.4938521.html;jsessionid=_i1rCZVDrqkoL_MAWqhmAzI0.x-aip-live-06?itemId=/content/aip/journal/adva/5/12/10.1063/1.4938521&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=aipadvances.aip.org/5/12/10.1063/1.4938521&pageURL=http://scitation.aip.org/content/aip/journal/adva/5/12/10.1063/1.4938521'
Right1,Right2,Right3,