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1.
1.M. Bauer, C. Ritter, P. A. Crozier, J. Ren, J. Menendez, G. Wolf, and J. Kouvetakis, Appl. Phys. Lett. 83(11), 2163 (2003).
http://dx.doi.org/10.1063/1.1606104
2.
2.P. Aella, C. Cook, J. Tolle, S. Zollner, A. V. G. Chizmeshya, and J. Kouvetakis, Appl. Phys. Lett. 84(6), 888 (2004).
http://dx.doi.org/10.1063/1.1645324
3.
3.J. Menéndez and J. Kouvetakis, Appl. Phys. Lett. 85(7), 1175-1177 (2004).
http://dx.doi.org/10.1063/1.1784032
4.
4.H. Lin, R. Chen, W. Lu, Y. Huo, T. I. Kamins, and J. S. Harris, Appl. Phys. Lett. 100(14), 141908 (2012).
http://dx.doi.org/10.1063/1.3701732
5.
5.S. Wirths, A. T. Tiedemann, Z. Ikonic, P. Harrison, B. Holländer, T. Stoica, G. Mussler, M. Myronov, J. M. Hartmann, D. Grützmacher, D. Buca, and S. Mantl, Appl. Phys. Lett. 102(19), 192-103 (2013).
http://dx.doi.org/10.1063/1.4805034
6.
6.S. Sant and A. Schenk, J. IEEE Electron Devices Soc. 3(3), 164-175 (2015).
http://dx.doi.org/10.1109/JEDS.2015.2390971
7.
7. Gupta, V. Moroz, L. Smith, Q. Lu, and K. C. Saraswat, IEEE. T. Electron. Dev. 61(5), 1222-1230 (2014).
http://dx.doi.org/10.1109/TED.2014.2311129
8.
8.G. Sun, H. H. Cheng, J. Menéndez, J. B. Khurgin, and R. A. Soref, Appl. Phys. Lett. 90(25), 251105 (2007).
http://dx.doi.org/10.1063/1.2749844
9.
9.Y.Y. Fang, J. Xie, J. Tolle, R. Roucka, V. R. D’Costa, A. V. Chizmeshya, J. Menéndez, and J. Kouvetakis, J. Amer. Chem. Soc. 130(47), 16095-16102 (2008).
http://dx.doi.org/10.1021/ja806636c
10.
10.G. Sun, R. A. Soref, and H. H. Cheng, J. Appl. Phys. 108(3), 033107 (2010).
http://dx.doi.org/10.1063/1.3467766
11.
11.P. Moontragoon, R. A. Soref, and Z. Ikonic, J. Appl. Phys. 112(7), 073106 (2012).
http://dx.doi.org/10.1063/1.4757414
12.
12.C. Xu, R. T. Beeler, G. J. Grzybowski, A. V. Chizmeshya, D. J. Smith, J. Meneéndez, and J. Kouvetakis, J. Amer. Chem. Soc. 134(51), 20756-20767 (2012).
http://dx.doi.org/10.1021/ja309894c
13.
13.R. T. Beeler, D. J. Smith, J. Kouvetakis, and J. Menéndez, IEEE J. Photovolt. 2(4), 434-440 (2012).
http://dx.doi.org/10.1109/JPHOTOV.2012.2206568
14.
14.R. T. Beeler, Chi Xu, D. J. Smith, G. Grzybowski, J. Menéndez, and J. Kouvetakis, Appl. Phys. Lett. 101(22), 221111 (2012).
http://dx.doi.org/10.1063/1.4768217
15.
15.G. Sun and S. Q. Yu, Solid State Electron. 83, 76-81 (2013).
http://dx.doi.org/10.1016/j.sse.2013.01.037
16.
16.J. D. Gallagher, C. Xu, C. L. Senaratne, T. Aoki, P. M. Wallace, J. Kouvetakis, and J. Menéndez, J. Appl. Phys. 118(13), 135701 (2015).
http://dx.doi.org/10.1063/1.4931770
17.
17.K. Gallacher, P. Velha, D. J. Paul, I. MacLaren, M. Myronov, and D. R. Leadley, Appl. Phys. Lett. 100(2), 022113 (2012).
http://dx.doi.org/10.1063/1.3676667
18.
18.H. Li, H. H. Cheng, L. C. Lee, C. P. Lee, L. H. Su, and Y. W. Suen, Appl. Phys. Lett. 104(24), 241904 (2014).
http://dx.doi.org/10.1063/1.4883748
19.
19.Y. Tong, G. Han, B. Liu, Y. Yang, L. Wang, W. Wang, and Y.-C. Yeo, H. IEEE. T. Electron. Dev. 60(2), 746-752 (2013).
http://dx.doi.org/10.1109/TED.2012.2233204
20.
20.X. Zhang, D. Zhang, J. Zheng, Z. Liu, C. He, C. Xue, G. Zhang, C. Li, B. Cheng, and Q. Wang, Solid State Electron. 114, 178-181 (2015).
http://dx.doi.org/10.1016/j.sse.2015.09.010
21.
21.M. Koike, Y. Kamimuta, E. Kurosawa, and T. Tezuka, Appl. Phys. Exp. 7(5), 51302 (2014).
http://dx.doi.org/10.7567/APEX.7.051302
22.
22.D. C. S. Dumas, K. Gallacher, R. Millar, I. MacLaren, M. Myronov, D. R. Leadley, and D. J. Paul, Appl. Phys. Lett. 104(16), 162101 (2014).
http://dx.doi.org/10.1063/1.4873127
23.
23.J. Zheng, S. Wang, T. Zhou, Y. Zuo, B. Cheng, and Q. Wang, Opt. Mater. Exp. 5(2), 287-294 (2015).
http://dx.doi.org/10.1364/OME.5.000287
24.
24.J. Zheng, S. Wang, X. Zhang, Z. Liu, C. Xue, C. Li, Y. Zuo, B. Cheng, and Q. Wang, IEEE Electron Device Lett. 36(9), 878-880 (2015).
http://dx.doi.org/10.1109/LED.2015.2459062
25.
25.L. Wang, S. Su, W. Wang, Y. Yang, Y. Tong, P. Guo, X. Gong, G. Zhang, C. Xue, B. Cheng, G. Han, and Y. Yeo, IEEE Electron Device Lett. 33(11), 1529-1531 (2012).
http://dx.doi.org/10.1109/LED.2012.2212871
26.
26.D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. (Wiley, New York, NY, USA, 2006).
http://aip.metastore.ingenta.com/content/aip/journal/adva/5/12/10.1063/1.4939588
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/content/aip/journal/adva/5/12/10.1063/1.4939588
2015-12-31
2016-12-08

Abstract

N-type GeSiSn ternary alloy was successfully grown by the Sb in situ doping technique through sputter epitaxy method. A study comparing the electrical contact characteristic of n- GeSiSn with and without phosphorous implantation was performed. Ohmic contacts to n-type GeSiSn are realized by shallow P implant and Ni(GeSiSn) formation after rapid thermal annealing at 400 °C. It is proposed that the ohmic behavior is mainly attributed to the phosphorous segregation effect confirmed by secondary ion mass spectroscopy.

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