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N-type GeSiSn ternary alloy was successfully grown by the Sb in situ doping technique through sputter epitaxy method. A study comparing the electrical contact characteristic of n- GeSiSn with and without phosphorous implantation was performed. Ohmic contacts to n-type GeSiSn are realized by shallow P implant and Ni(GeSiSn) formation after rapid thermal annealing at 400 °C. It is proposed that the ohmic behavior is mainly attributed to the phosphorous segregation effect confirmed by secondary ion mass spectroscopy.


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