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The promising magnetic Ge metal-oxide-semiconductor field-effect transistor (MOSFET) is demonstrated by the implement of the BaTiO as the gate dielectric layer and the magnetic FePt film as the metal gate (MG) on the Ge (100) substrate. The designed magnetic FePt MG with the intrinsic 0.2 Tesla magnetic field along the vertical direction leads to ∼0.75 nm equivalent-oxide-thickness (EOT) reduction, ∼100X gate leakage (J) reduction, and ∼50% on-current (I) enhancement in the Ge FET due to the demonstration of the colossal magneto-capacitance effect. The influence of the magnetic field along different directions such as the vertical and the lateral direction on the Ge FET is also investigated in this work. The designed magnetic gate stack scheme on the Ge FET with the better Jg-EOT gate stack characteristics, I, and the short channel control behavior (Sub-threshold swing-EOT) provides the useful solution for the future low power mobile device design.


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