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/content/aip/journal/adva/5/2/10.1063/1.4913372
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/content/aip/journal/adva/5/2/10.1063/1.4913372
2015-02-18
2016-12-04

Abstract

Memristors exhibit very sharp off-to-on transitions with a large on/off resistance ratio. These remarkable characteristics coupled with their long retention time and very simple device geometry make them nearly ideal for three-terminal devices where the gate voltage can change their on/off voltages and/or simply turn them off, eliminating the need for bipolar operations. In this paper, we propose a cation migration-based computational model to explain the quantized current conduction and the gate field-effect in Cu S memristors. Having tree-shaped conductive filaments inside a memristor is the reason for the quantized current conduction effect. Applying a gate voltage causes a deformation of the conductive filaments and thus controls the SET and the RESET process of the device.

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