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/content/aip/journal/adva/5/3/10.1063/1.4914355
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/content/aip/journal/adva/5/3/10.1063/1.4914355
2015-03-04
2016-09-26

Abstract

We report on ultraviolet-visible (UV-Vis) electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with the CeO films annealed at low temperatures. At the same injection current, the UV-Vis EL from the MOS device with the 550 °C-annealed CeO film is much stronger than that from the counterpart with the 450 °C-annealed CeO film. This is due to that the 550 °C-annealed CeO film contains more Ce3+ ions and oxygen vacancies. It is tentatively proposed that the recombination of the electrons in multiple oxygen-vacancy–related energy levels with the holes in Ce 4f1 energy band pertaining to Ce3+ ions leads to the UV-Vis EL.

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