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Ultraviolet-visible electroluminescence from metal-oxide-semiconductor devices with CeO2
films on silicon
2.L. Rebohle, J. Lehmann, S. Prucnal, A. Kanjilal, A. Nazarov, I. Tyagulskii, W. Skorupa, and M. Helm, Appl. Phys. Lett. 93, 071908 (2008).
29.X. Mo, G. Fang, H. Long, S. Li, H. Huang, H. Wang, Y. Liu, X. Meng, Y. Zhang, and C. Pan, J. Lumin. 137, 116 (2013).
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We report on ultraviolet-visible (UV-Vis) electroluminescence (EL) from metal-oxide-semiconductor
devices with the CeO2
films annealed at low temperatures. At the same injection current, the UV-Vis EL from the MOS
device with the 550 °C-annealed CeO2
film is much stronger than that from the counterpart with the 450 °C-annealed CeO2
film. This is due to that the 550 °C-annealed CeO2
film contains more Ce3+ ions and oxygen vacancies. It is tentatively proposed that the recombination of the electrons in multiple oxygen-vacancy–related energy levels with the holes in Ce 4f1 energy band pertaining to Ce3+ ions leads to the UV-Vis EL.
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