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/content/aip/journal/adva/5/3/10.1063/1.4915128
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http://aip.metastore.ingenta.com/content/aip/journal/adva/5/3/10.1063/1.4915128
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/content/aip/journal/adva/5/3/10.1063/1.4915128
2015-03-12
2016-12-05

Abstract

This paper deals with the description and the application of an original photoluminescence (PL) imaging technique on thick, lighly n-type doped 4H-SiC epilayers for in-grown stacking fault (SF) identification. This technique, call “photoluminescence imaging spectroscopy” (PLIS), compares different PL imaging pictures in order to create a new picture which displays the location and an approximation of the maximum photoemission wavelength of SFs at room temperature. Five types of SF have been detected and identified by PLIS on two different wafers. The origin of SF type modification during the growth is also discussed in this work.

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&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=aipadvances.aip.org/5/3/10.1063/1.4915128&pageURL=http://scitation.aip.org/content/aip/journal/adva/5/3/10.1063/1.4915128'
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