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/content/aip/journal/adva/5/3/10.1063/1.4916268
1.
1.Joachim Piprek, physica status solidi. A 207(No.10), 2217 (2010).
http://dx.doi.org/10.1002/pssa.201026149
2.
2.Justin Iveland, Lucio Martinelli, Jacques Peretti, James S. Speck, and Claude Weisbuch, Phys. Rev. Lett. 110(17), 177406 (2013).
http://dx.doi.org/10.1103/PhysRevLett.110.177406
3.
3.Min-Ho Kim, Martin F. Schubert, Qi Dai, Jong Kyu Kim, E. Fred Schubert, Joachim Piprek, and Yongjo Park, Appl Phys Lett 91(18 ) (2007).
4.
4.Martin F. Schubert, Sameer Chhajed, Jong Kyu Kim, E. Fred Schubert, Daniel D. Koleske, Mary H. Crawford, Stephen R. Lee, Arthur J. Fischer, Gerald Thaler, and Michael A. Banas, Appl Phys Lett 91(23 ) (2007).
5.
5.X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis, T. Paskova, G. Mulholland, and K. R. Evans, Appl Phys Lett 97(3), 031110 (2010).
http://dx.doi.org/10.1063/1.3465658
6.
6.Sang-Heon Han, Dong-Yul Lee, Sang-Jun Lee, Chu-Young Cho, Min-Ki Kwon, S. P. Lee, D. Y. Noh, Dong-Joon Kim, Yong Chun Kim, and Seong-Ju Park, Appl Phys Lett 94(23 ) (2009).
7.
7.David S. Meyaard, Guan-Bo Lin, Qifeng Shan, Jaehee Cho, E. Fred Schubert, Hyunwook Shim, Min-Ho Kim, and Cheolsoo Sone, Appl Phys Lett 99(25), 251115 (2011).
http://dx.doi.org/10.1063/1.3671395
8.
8.Giovanni Verzellesi, Davide Saguatti, Matteo Meneghini, Francesco Bertazzi, Michele Goano, Gaudenzio Meneghesso, and Enrico Zanoni, J. Appl. Phys. 114(7), 071101 (2013).
http://dx.doi.org/10.1063/1.4816434
9.
9.Chen Jun, Fan Guang-Han, Pang-Wei, and Zheng Shu-Wen, Chinese Physics Letters 28(No.12), 128501 (2011).
http://dx.doi.org/10.1088/0256-307X/28/12/128501
10.
10.O. Svensk, P. T. Törmä, S. Suihkonen, M. Ali, H. Lipsanen, M. Sopanen, M. A. Odnoblyudov, and V. E. Bougrov, J. Cryst. Growth 310(23), 5154 (2008).
http://dx.doi.org/10.1016/j.jcrysgro.2008.07.025
11.
11.J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, Science 327(5961), 60 (2010).
http://dx.doi.org/10.1126/science.1183226
12.
12.Shunfeng Li and Andreas Waag, J. Appl. Phys. 111(7), 071101 (2012).
http://dx.doi.org/10.1063/1.3694674
13.
13.Junjie Kang, Hongjian Li, Zhi Li, Zhiqiang Liu, Ping Ma, Xiaoyan Yi, and Guohong Wang, Appl Phys Lett 103(10), 102104 (2013).
http://dx.doi.org/10.1063/1.4819879
14.
14.Zhiqiang Liu, Jun Ma, Xiaoyan Yi, Enqing Guo, Liancheng Wang, Junxi Wang, Na Lu, Jinmin Li, Ian Ferguson, and Andrew Melton, Appl Phys Lett 101 (261106 ) (2012).
15.
15.Zi-Hui Zhang, Wei Liu, Swee Tiam Tan, Yun Ji, Liancheng Wang, Binbin Zhu, Yiping Zhang, Shunpeng Lu, Xueliang Zhang, Namig Hasanov, Xiao Wei Sun, and Hilmi Volkan Demir, Appl Phys Lett 105 (153503 ) (2014).
16.
16.N. F. Gardner, G. O. Müller, Y. C. Shen, G. Chen, S. Watanabe, W. Götz, and M. R. Krames, Appl Phys Lett 91(24 ) (2007).
http://dx.doi.org/10.1063/1.2807272
17.
17.Yen-Kuang Kuo, Jih-Yuan Chang, Miao-Chan Tsai, and Sheng-Horng Yen, Appl Phys Lett 95(1), 011116 (2009).
http://dx.doi.org/10.1063/1.3176406
18.
18.SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, PT Fini, S Keller, SP Denbaars, JS Speck, UK Mishra, S Nakamura, S Yamaguchi, S Kamiyama, H Amano, I Akasaki, J Han, and T. Sota, Nature Materials 5(No.10), 810 (2006).
http://dx.doi.org/10.1038/nmat1726
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/content/aip/journal/adva/5/3/10.1063/1.4916268
2015-03-23
2016-09-25

Abstract

In this work, novel double Electron Blocking Layers for InGaN/GaN multiple quantum wells light-emitting diodes were proposed to mitigate the efficiency droop at high current density. The band diagram and carriers distributions were investigated numerically. The results indicate that due to a newly formed holes stack in the p-GaN near the active region, the hole injection has been improved and an uniform carriers distribution can be achieved. As a result, in our new structure with double Electron Blocking Layers, the efficiency droop has been reduced to 15.5 % in comparison with 57.3 % for the LED with AlGaN EBL at the current density of 100 2.

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