No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers
3.Min-Ho Kim, Martin F. Schubert, Qi Dai, Jong Kyu Kim, E. Fred Schubert, Joachim Piprek, and Yongjo Park, Appl Phys Lett 91(18 ) (2007).
4.Martin F. Schubert, Sameer Chhajed, Jong Kyu Kim, E. Fred Schubert, Daniel D. Koleske, Mary H. Crawford, Stephen R. Lee, Arthur J. Fischer, Gerald Thaler, and Michael A. Banas, Appl Phys Lett 91(23 ) (2007).
5.X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis, T. Paskova, G. Mulholland, and K. R. Evans, Appl Phys Lett 97(3), 031110 (2010).
6.Sang-Heon Han, Dong-Yul Lee, Sang-Jun Lee, Chu-Young Cho, Min-Ki Kwon, S. P. Lee, D. Y. Noh, Dong-Joon Kim, Yong Chun Kim, and Seong-Ju Park, Appl Phys Lett 94(23 ) (2009).
7.David S. Meyaard, Guan-Bo Lin, Qifeng Shan, Jaehee Cho, E. Fred Schubert, Hyunwook Shim, Min-Ho Kim, and Cheolsoo Sone, Appl Phys Lett 99(25), 251115 (2011).
8.Giovanni Verzellesi, Davide Saguatti, Matteo Meneghini, Francesco Bertazzi, Michele Goano, Gaudenzio Meneghesso, and Enrico Zanoni, J. Appl. Phys. 114(7), 071101 (2013).
14.Zhiqiang Liu, Jun Ma, Xiaoyan Yi, Enqing Guo, Liancheng Wang, Junxi Wang, Na Lu, Jinmin Li, Ian Ferguson, and Andrew Melton, Appl Phys Lett 101 (261106 ) (2012).
15.Zi-Hui Zhang, Wei Liu, Swee Tiam Tan, Yun Ji, Liancheng Wang, Binbin Zhu, Yiping Zhang, Shunpeng Lu, Xueliang Zhang, Namig Hasanov, Xiao Wei Sun, and Hilmi Volkan Demir, Appl Phys Lett 105 (153503 ) (2014).
18.SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, PT Fini, S Keller, SP Denbaars, JS Speck, UK Mishra, S Nakamura, S Yamaguchi, S Kamiyama, H Amano, I Akasaki, J Han, and T. Sota, Nature Materials 5(No.10), 810 (2006).
Article metrics loading...
In this work, novel double Electron Blocking Layers for InGaN/GaN multiple quantum wells
light-emitting diodes were proposed to mitigate the efficiency droop at high current density. The band diagram and carriers distributions were investigated numerically. The results indicate that due to a newly formed holes stack in the p-GaN near the active region, the hole injection has been improved and an uniform carriers distribution can be achieved. As a result, in our new structure with double Electron Blocking Layers, the efficiency droop has been reduced to 15.5 % in comparison with 57.3 % for the LED with AlGaN EBL at the current density of 100 A/cm
Full text loading...
Most read this month