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1.J. P. Fleurial, L. Gailliard, R. Triboulet, H. Scherrer, and S. Scherrer, J. Phys. Chem. Solids 49, 1237 (1988).
2.H. Scherrer and S. Scherrer, inCRC Handbook of Thermoelectrics, edited by D. M. Rowe (CRC Press, London, U.K., 1995), ch. 19.
3.V. A. Kutasov, L. N. Lukyanova, and M. V. Vedernikov, inThermoelectrics Handbook Macro to Nano (CRC, Boca Raton, 2006), Ch. 37.
4.H. J. Goldsmid, J. Appl. Phys. 32, 2198 (1961).
5.Y. Ma, Q. Hao, B. Poudel, Y. C. Lan, B. Yu, D. Z. Wang, G. Chen, and Z. F. Ren, Nano Lett. 8, 2580 (2008).
6.N. K. Stark, T. E. Svechnikov, and S. N. Chizhevskaya, Inorg. Mater. 21, 328 (1985).
7.L. V. Prokofieva, D. A. Pshenay-Severin, P. P. Konstantinov, and A. A. Shabaldin, Semiconductors 43, 937 (2009).
8.L. D. Zhao, B. P. Zhang, W. S. Liu, H. L. Zhang, and J. F. Li, J. Solid State Chem. 181, 3278 (2008).
9.Z. H. Ge, B. P. Zhang, Y. Liu, and J. F. Li, Phys. Chem. Chem. Phys. 14, 44754481 (2012).
10.L. D. Zhao, S. H. Lo, J. Q. He, H. Li, K. Biswas, J. Androulakis, C. I. Wu, T. P. Hogan, D. Y. Chung, V. P. Dravid, and M. G. Kanatzidis, J. Am. Chem. Soc. 133, 20476 (2011).
11.Q. Y. Zhang, H. Wang, W. S. Liu, H. Z. Wang, B. Yu, Q. Zhang, Z. T. Tian, G. Ni, S. Lee, K. Esfarjani, G. Chen, and Z. F. Ren, Energy Environ. Sci. 5, 5246 (2012).
12.Y. Z. Pei, J. Lensch-Falk, E. S. Toberer, D. L. Medlin, and G. J. Snyder, Adv. Funct. Mater. 21, 241 (2011).
13.Q. Zhang, F. Cao, W. S. Liu, K. Lukas, B. Yu, S. Chen, C. Opeil, D. Broido, G. Chen, and Z. F. Ren, J. Am. Chem. Soc. 2012, 134, 10031 (2012).
14.X. Shi, J. Yang, J. R. Salvador, M. F. Chi, J. Y. Cho, H. Wang, S. Q. Bai, J. H. Yang, W. Q. Zhang, and L. D. Chen, J. Am. Chem. Soc. 133, 7837 (2011).
15.R. Venkatasubramanian, E. Siivola, T. Colpitts, and B. O’Quinn, Nature 413, 597 (2001).
16.P. Magri, C. Boulanger, and J. M. Lecuire, J. Mater. Chem. 6, 773 (1996).
17.W. Liu, K. C. Lukas, K. McEnaney, S. Lee, Q. Z. , C. P. Opeil, G. Chen, and Z. Ren, Energy Environ. Sci. 6, 552 (2013).
18.M. Strasser, R. Aigner, M. Franosch, and G. Wachutka, Sens. Actuators A, Phys. 97, 535 (2002).
19.K. Itoigawa, H. Ueno, M. Shiozaki, T. Toriyama, and S. Sugiyama, J. Micromech. Microeng. 15, S233 (2005).
20.H. Bottner, J. Nurnus, A. Gavrikov, G. Kuhner, M. Jagle, C. Kunzel, D. Eberhard, G. Plescher, A. Schubert, and K. H. Schlereth, J. Microelectro- mech. Syst. 13, 414 (2004).
21.M. Kishi, H. Nemoto, T. Hamao, M. Yamamoto, S. Sudou, M. Mandai, and S. Yamamoto, inProc. 18th Int. Conf. Thermoelectrics (1999) p. 301.
22.A. Bulusu and D. Walker, Superlattices and Microstructures 44, 1 (2008).
23.P. Blaha, K. Schwarz, G. K. H. Madsen, D. Kvasnicka, and J. Luitz, inAn Augmented Plane Wave Plus Local Orbitals Pro- gram for Calculating Crystal Properties, edited by K. Schwarz (TU Wien, Austria, 2001).
24.A. Zunger, S.-H. Wei, L. G. Ferreira, and J. E. Bernard, Phys. Rev. Lett. 65, 353 (1990).
25.A. Chroneos, C. Jiang, R. W. Grimes, and U. Schwingenschlögl, Chem. Phys. Lett. 493, 97 (2010).
26.J. P. Perdew, inElectronic Structure of Solids 199I, edited by P. Ziesche and H. Eschrig (Akademie Verlag, Berlin, 1991), Vol. 11.
27.E. Engel and S. H. Vosko, Phys. Rev. B 47, 13164 (1993).
28.G. K. H. Madsen and D. J. Singh, Comput. Phys. Commun. 175, 67 (2006).
29.J. Tolle, A. V. G. Chizmeshya, Y.-Y. Fang, J. Kouvetakis, V. R. D’Costa, C.-W. Hu, J. Menendez, and I. S. T. Tsong, Appl. Phys. Lett. 89, 231924 (2006).
30.R. A. Soref and C. H. Perry, J. Appl. Phys. 69, 539 (1990).
31.V. R. D’Costa, C. S. Cook, J. Menendez, J. Kovetakis, J. Tolle, and S. Zollner, Solid State Commun. 138, 309 (2006).
32.J. L. Corkill and M. L. Cohen, Phys. Rev. B 47, 10304 (1993).
33.R. V. S. Jensen, T. G. Pedersen, and A. N Larsen, J. Phys.: Condens. Matter 23, 345501 (2011).
34.E. Simoen and C. Claeys, Electrochem. Soc. Proc. 17, 223 (2000).
35.G. Joshi, H. Lee, Y. C. Lan, X. W. Wang, G. H. Zhu, D. Z. Wang, R. W. Gould, D. C. Cuff, M. Y. Tang, M. S. Dresselhaus, G. Chen, and Z. F. Ren, Nano Lett. 8, 4670 (2008).
36.X. W. Wang, H. Lee, Y. C. Lan, G. H. Zhu, G. Joshi, D. Z. Wang, J. Yang, A. J. Muto, M. Y. Tang, J. Klatsky, S. Song, M. S. Dresselhaus, G. Chen, and Z. F. Ren, Appl. Phys. Lett. 93, 193121 (2008).
37.F. Schaffler, inProperties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe, edited byM.E. Levinshtein, S.L. Rumyantsev, and M.S. Shur (John Wiley & Sons, Inc., New York, 2001), p. 149.
38.P. Moontragoon, Z. Ikonić, and P. Harrison, Semicond. Sci. Technol. 22, 742 (2007).
39.R. Braunstein, A. R. Moore, and F. Herman, Phys. Rev. 109, 695 (1958).
40.J. Weber and M. I. Alonso, Phys. Rev. B 40, 5683 (1989).
41. The power-factor (Pα2σ ) is defined as the product of the square of thermopower (α) with electrical conductivity (σ).
42.P. Konstantinov, L. Prokof’eva, M. Fedorov, D. Pshenai-Severin, Y. Ravich, V. Kompaniets, and V. Chistyakov, Semiconductors 39, 1023 (2005).
43.Y. Pei, X. Shi, A. LaLonde, H. Wang, L. Chen, G. J. , and Snyder, Nature 473, 66 (2011).
44.H. Stohr and W. Klemm, Z. Anorg. Allgem. Chem. 241, 305 (1954).

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The viability of Si-Ge alloys in thermoelectric applications lies in its high figure-of-merit, non-toxicity and earth-abundance. However, what restricts its wider acceptance is its operation temperature (above 1000 K) which is primarily due to its electronic band gap. By means of density functional theory calculations, we propose that iso-electronic Sn substitutions in Si-Ge can not only lower its operation to mid-temperature range but also deliver a high thermoelectric performance. While calculations find a near invariance in the magnitude of thermopower, empirical models indicate that the materials thermal conductivity would also reduce, thereby substantiating that Si-Ge-Sn alloys are promising mid-temperature thermoelectrics.


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